SCHEMBL705569

SCHEMBL705569

CC(C)C(c1ccccc1)C(C)(C)O[SiH3]

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RIPK1 Q13546 2/20 0.37
ATM Q13315 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
TAAR1 Q96RJ0 3/20 0.35
SLC6A3 Q01959 3/20 0.35
SLC6A4 P31645 3/20 0.35
CACNA1F O60840 1/20 0.35
CHRM2 P08172 1/20 0.35
CHRM1 P11229 1/20 0.35
ADRA2B P18089 1/20 0.35
CHRM3 P20309 1/20 0.35
ADRA1A P35348 1/20 0.35
HRH1 P35367 1/20 0.35
OPRK1 P41145 1/20 0.35
CACNA1D Q01668 1/20 0.35
KCNH2 Q12809 1/20 0.35
CACNA1S Q13698 1/20 0.35
CACNA1C Q13936 1/20 0.35
SCN5A Q14524 1/20 0.35
SLC6A2 P23975 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17084207 0.82 RIPK1 (0.38) RIPK1ATML3MBTL1TAAR1SLC6A3
SCHEMBL17084160 0.82 RIPK1 (0.38) RIPK1ATML3MBTL1TAAR1SLC6A3
SCHEMBL704259 0.79 SLC6A4 (0.41) RIPK1ATML3MBTL1TAAR1SLC6A3
SCHEMBL10360017 0.78 RIPK1 (0.45) RIPK1ATML3MBTL1TAAR1SLC6A3
SCHEMBL704632 0.78 ATM (0.37) RIPK1ATML3MBTL1TAAR1SLC6A3
SCHEMBL53374 0.77 TAAR1 (0.37) RIPK1ATML3MBTL1TAAR1SLC6A3
SCHEMBL17084089 0.72 SLC6A4 (0.42) RIPK1ATML3MBTL1TAAR1SLC6A3
SCHEMBL17084162 0.72 SLC6A4 (0.42) RIPK1ATML3MBTL1TAAR1SLC6A3
SCHEMBL16133820 0.72 RIPK1 (0.41) RIPK1ATML3MBTL1TAAR1SLC6A3
SCHEMBL16133821 0.72 RIPK1 (0.41) RIPK1ATML3MBTL1TAAR1SLC6A3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed