SCHEMBL704259

SCHEMBL704259

CC(c1ccccc1)C(C)(C)O[SiH3]

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SLC6A4 P31645 1/20 0.41
RIPK1 Q13546 2/20 0.39
CACNA1F O60840 1/20 0.37
CHRM2 P08172 1/20 0.37
CHRM1 P11229 1/20 0.37
ADRA2B P18089 1/20 0.37
CHRM3 P20309 1/20 0.37
ADRA1A P35348 1/20 0.37
HRH1 P35367 1/20 0.37
OPRK1 P41145 1/20 0.37
CACNA1D Q01668 1/20 0.37
SLC6A3 Q01959 1/20 0.37
KCNH2 Q12809 1/20 0.37
CACNA1S Q13698 1/20 0.37
CACNA1C Q13936 1/20 0.37
SCN5A Q14524 1/20 0.37
TAAR1 Q96RJ0 3/20 0.35
ADRA2A P08913 1/20 0.34
ADRA2C P18825 1/20 0.34
CYP2D6 P10635 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28372401 0.82 SLC6A4 (0.44) SLC6A4RIPK1CACNA1FCHRM2CHRM1
SCHEMBL3481706 0.81 CHRNA7 (0.35)
SCHEMBL1911313 0.80 SLC6A4 (0.42) SLC6A4RIPK1CACNA1FCHRM2CHRM1
SCHEMBL15087920 0.80 SLC6A4 (0.42) SLC6A4RIPK1CACNA1FCHRM2CHRM1
SCHEMBL17086696 0.80 SLC6A4 (0.42) SLC6A4RIPK1CACNA1FCHRM2CHRM1
SCHEMBL53374 0.80 TAAR1 (0.37) SLC6A4RIPK1CACNA1FCHRM2CHRM1
SCHEMBL705569 0.79 RIPK1 (0.37) SLC6A4RIPK1CACNA1FCHRM2CHRM1
SCHEMBL8954028 0.79 ALDH1A1 (0.34) HIF1AL3MBTL1MAPK1ALDH1A1
SCHEMBL2330105 0.78 SLC6A4 (0.41) SLC6A4RIPK1CACNA1FCHRM2CHRM1
SCHEMBL19121443 0.78 SLC6A4 (0.41) SLC6A4RIPK1CACNA1FCHRM2CHRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0324585-B1 CATALYST COMPOSITION FOR PREPARING HIGH DENSITY OR LINEAR LOW DENSITY OLEFIN POLYMERS OF CONTROLLED MOLECULAR WEIGHT DISTRIBUTION MOBIL OIL CORPORATION (US) 1993-05-05 EP claimed
CN-116355270-A Rigid nano-pore organic silicon aerogel and preparation method and application thereof 华东理工大学 2023-06-30 CN disclosed
CN-109943226-B High-bending-resistance glass coating liquid composition and preparation method thereof 深圳市航天新材科技有限公司 2021-04-13 CN disclosed
CN-109836970-B High-impermeability graphene modified epoxy coating liquid composition and preparation method thereof 深圳市航天新材科技有限公司 2021-01-12 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-8299185-B2 Curable cage-type silicone copolymer and process for production thereof and curable resin composition comprising curable cage-type silicone copolymer and cured product thereof NIPPON STEEL CHEMICAL CO., LTD. (JP) 2012-10-30 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100280190-A1 CURABLE CAGE-TYPE SILICONE COPOLYMER AND PROCESS FOR PRODUCTION THEREOF AND CURABLE RESIN COMPOSITION COMPRISING CURABLE CAGE-TYPE SILICONE COPOLYMER AND CURED PRODUCT THEREOF NIPPON STEEL CHEMICAL & MATERIAL CO., LTD. (JP) 2010-11-04 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed