SCHEMBL705813

SCHEMBL705813

CCC[Si](CCCC[Si](CCC)(OC)OC)(OC)OC

nearest known ligand 0.31

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3241073 0.97 LMNA (0.34) LMNA
SCHEMBL3237994 0.97 LMNA (0.34) LMNA
SCHEMBL3243255 0.97 LMNA (0.34) LMNA
SCHEMBL7636819 0.95 LMNA (0.38) LMNA
SCHEMBL704672 0.94 LMNA (0.31) LMNA
SCHEMBL8852296 0.92 LMNA (0.41) LMNA
SCHEMBL5572091 0.92 LMNA (0.41) LMNA
SCHEMBL8852311 0.92 LMNA (0.41) LMNA
SCHEMBL5387369 0.92 LMNA (0.41) LMNA
SCHEMBL5570835 0.92 LMNA (0.41) LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024150783-A1 ADHESIVE COMPOSITION, ADHESIVE LAYER, OPTICAL FILM WITH ADHESIVE LAYER, AND DISPLAY DEVICE 住友化学株式会社 2024-07-18 WO disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
EP-2163664-A1 Method for depositing si-containing film, insulator film, and semiconductor device Shin-Etsu Chemical Co., Ltd. (JP) 2010-03-17 EP disclosed
US-20100061915-A1 METHOD FOR DEPOSITING SI-CONTAINING FILM, INSULATOR FILM, AND SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-11 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed