SCHEMBL705886

SCHEMBL705886

CC(C)(C)C(O[SiH3])c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ATM Q13315 1/20 0.39
L3MBTL1 Q9Y468 1/20 0.39
RIPK1 Q13546 2/20 0.36
SLC6A4 P31645 3/20 0.36
SLC6A3 Q01959 3/20 0.36
SLC6A2 P23975 2/20 0.36
AOC3 Q16853 2/20 0.35
MAPK1 P28482 1/20 0.34
TAAR1 Q96RJ0 1/20 0.34
CACNA1F O60840 1/20 0.34
CHRM2 P08172 1/20 0.34
CHRM1 P11229 1/20 0.34
ADRA2B P18089 1/20 0.34
CHRM3 P20309 1/20 0.34
ADRA1A P35348 1/20 0.34
HRH1 P35367 1/20 0.34
OPRK1 P41145 1/20 0.34
CACNA1D Q01668 1/20 0.34
KCNH2 Q12809 1/20 0.34
CACNA1S Q13698 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7438325 0.81 ATM (0.41) ATML3MBTL1RIPK1SLC6A4SLC6A3
SCHEMBL2127629 0.81 ATM (0.41) ATML3MBTL1RIPK1SLC6A4SLC6A3
SCHEMBL12344306 0.79 ATM (0.40) ATML3MBTL1RIPK1SLC6A4SLC6A3
SCHEMBL11911981 0.79 ATM (0.40) ATML3MBTL1RIPK1SLC6A4SLC6A3
SCHEMBL14663964 0.79 ATM (0.40) ATML3MBTL1RIPK1SLC6A4SLC6A3
SCHEMBL230734 0.78 KMT2A (0.35) RIPK1HRH1DPP4KMT2A
SCHEMBL7701248 0.77 ATM (0.39) ATML3MBTL1RIPK1SLC6A4SLC6A3
SCHEMBL10713851 0.77 TSHR (0.39) MAPK1DPP4
SCHEMBL11786688 0.77 ATM (0.43) ATML3MBTL1RIPK1SLC6A4SLC6A3
SCHEMBL5570358 0.77 LMNA (0.38) ATML3MBTL1RIPK1AOC3TAAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12109812-B2 Ink jet printing method and ink jet printing apparatus SEIKO EPSON CORPORATION (JP) 2024-10-08 US disclosed
CN-114055975-B Ink jet recording method and ink jet recording apparatus 精工爱普生株式会社 2023-05-12 CN disclosed
US-20220032618-A1 Ink Jet Printing Method And Ink Jet Printing Apparatus SEIKO EPSON CORPORATION (JP) 2022-02-03 US disclosed
US-10259208-B2 Three-dimensional shaped object manufacturing device, method for manufacturing three-dimensional shaped object, and three-dimensional shaped object SEIKO EPSON CORPORATION (JP) 2019-04-16 US disclosed
US-9579852-B2 Method for manufacturing three-dimensional shaped object SEIKO EPSON CORPORATION (JP) 2017-02-28 US disclosed
US-20160339602-A1 METHOD OF MANUFACTURING THREE-DIMENSIONAL STRUCTURE, THREE-DIMENSIONAL STRUCTURE MANUFACTURING APPARATUS, AND THREE-DIMENSIONAL STRUCTURE SEIKO EPSON CORPORATION (JP) 2016-11-24 US disclosed
US-20160263829-A1 THREE-DIMENSIONAL MODELING APPARATUS, MANUFACTURING METHOD, AND COMPUTER PROGRAM SEIKO EPSON CORPORATION (JP) 2016-09-15 US disclosed
US-9415545-B2 Method of manufacturing three-dimensional shaped object SEIKO EPSON CORPORATION (JP) 2016-08-16 US disclosed
US-20160107385-A1 THREE-DIMENSIONAL SHAPED OBJECT MANUFACTURING METHOD AND THREE-DIMENSIONAL SHAPED OBJECT SEIKO EPSON CORPORATION (JP) 2016-04-21 US disclosed
US-20150273765-A1 METHOD OF MANUFACTURING THREE-DIMENSIONAL STRUCTURE AND THREE-DIMENSIONAL STRUCTURE SEIKO EPSON CORPORATION (JP) 2015-10-01 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20090077798-A1 METHOD FOR FORMING CONDUCTIVE POST, METHOD FOR MANUFACTURING MULTILAYERED WIRING SUBSTRATE, AND METHOD FOR MANUFACTURING ELECTRONIC APPARATUS SEIKO EPSON CORPORATION (JP) 2009-03-26 US disclosed
US-20090071706-A1 METHOD FOR PRODUCING MULTILAYERED WIRING SUBSTRATE, MULTILAYERED WIRING SUBSTRATE, AND ELECTRONIC APPARATUS SEIKO EPSON CORPORATION (JP) 2009-03-19 US disclosed
US-7500895-B2 Patterned substrate, electro-optical device, and method for manufacturing an electro-optical device SEIKO EPSON CORPORATION (JP) 2009-03-10 US disclosed
US-20080317943-A1 METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING ELECTRO-OPTICAL DEVICE, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE SEIKO EPSON CORPORATION (JP) 2008-12-25 US disclosed
US-20080311285-A1 CONTACT HOLE FORMING METHOD, CONDUCTING POST FORMING METHOD, WIRING PATTERN FORMING METHOD, MULTILAYERED WIRING SUBSTRATE PRODUCING METHOD, ELECTRO-OPTICAL DEVICE PRODUCING METHOD, AND ELECTRONIC APPARATUS PRODUCING METHOD SEIKO EPSON CORPORATION (JP) 2008-12-18 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-20060127563-A1 Patterned substrate, electro-optical device, and method for manufacturing an electro-optical device SEIKO EPSON CORPORATION (JP) 2006-06-15 US disclosed
US-20060019034-A1 Process for producing chemical adsorption film and chemical adsorption film SEIKO EPSON CORPORATION (JP) 2006-01-26 US disclosed
US-20050287392-A1 Organic electroluminescent device, method for producing the same, and electronic apparatus SEIKO EPSON CORPORATION (JP) 2005-12-29 US disclosed