SCHEMBL705991

SCHEMBL705991

Cl[SiH2]CCC(c1ccccc1)c1ccccc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HRH1 P35367 7/20 0.50
HTR2A P28223 7/20 0.46
TAAR1 Q96RJ0 1/20 0.42
TDP1 Q9NUW8 1/20 0.41
KCNH2 Q12809 3/20 0.41
CYP3A4 P08684 2/20 0.41
CYP2D6 P10635 2/20 0.41
CHRM2 P08172 1/20 0.41
HTR1A P08908 1/20 0.41
ADRA2A P08913 1/20 0.41
ADORA3 P0DMS8 1/20 0.41
CHRM1 P11229 1/20 0.41
SMPD1 P17405 1/20 0.41
DRD1 P21728 1/20 0.41
TBXA2R P21731 1/20 0.41
SLC6A2 P23975 1/20 0.41
SLC6A4 P31645 1/20 0.41
ADRA1A P35348 1/20 0.41
OPRM1 P35372 1/20 0.41
DRD3 P35462 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16648875 0.86 HRH1 (0.54) HRH1HTR2ATAAR1TDP1KCNH2
SCHEMBL9242182 0.76 HRH1 (0.50) HRH1HTR2ATAAR1KCNH2CYP3A4
SCHEMBL707328 0.76 HRH1 (0.50) HRH1HTR2ATAAR1KCNH2CYP3A4
SCHEMBL704483 0.76 HRH1 (0.50) HRH1HTR2ATAAR1TDP1KCNH2
SCHEMBL3290730 0.76 HRH1 (0.68) HRH1HTR2ATAAR1TDP1KCNH2
SCHEMBL705505 0.75 HTR2A (0.46) HRH1HTR2ATAAR1TDP1LMNA
SCHEMBL705340 0.74 HRH1 (0.43) HRH1HTR2ATAAR1KCNH2CYP3A4
SCHEMBL844862 0.73 HRH1 (0.65) HRH1HTR2ATAAR1TDP1KCNH2
SCHEMBL2732016 0.73 HRH1 (0.65) HRH1HTR2ATAAR1TDP1KCNH2
SCHEMBL107889 0.72 HRH1 (0.56) HRH1HTR2ATAAR1TDP1KCNH2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed