SCHEMBL705992

SCHEMBL705992

CCC([SiH2]Cl)(c1ccccc1)c1ccccc1

nearest known ligand 0.46

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
CYP2C19 P33261 1/20 0.42
HIF1A Q16665 1/20 0.42
KCNN4 O15554 4/20 0.40
TSHR P16473 2/20 0.39
TAAR1 Q96RJ0 1/20 0.37
MAPK1 P28482 1/20 0.34
ALDH1A1 P00352 3/20 0.33
TP53 P04637 1/20 0.33
MAPT P10636 1/20 0.33
CYP1A2 P05177 1/20 0.32
ALOX15 P16050 1/20 0.32
MEN1 O00255 1/20 0.32
KMT2A Q03164 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16648876 0.83 CYP2C19 (0.39) CYP2C19HIF1AKCNN4TSHRTAAR1
SCHEMBL704484 0.77 KCNN4 (0.40) CYP2C19HIF1AKCNN4TSHRTAAR1
SCHEMBL4620006 0.77 KCNN4 (0.40) CYP2C19HIF1AKCNN4TAAR1MAPK1
SCHEMBL707329 0.77 KCNN4 (0.45) CYP2C19HIF1AKCNN4TSHRTAAR1
SCHEMBL10448326 0.76 CYP2C19 (0.41) CYP2C19HIF1AKCNN4TSHRTAAR1
SCHEMBL10808021 0.75 CYP2C19 (0.54) CYP2C19HIF1AKCNN4TAAR1MAPK1
SCHEMBL599044 0.75 CYP2C19 (0.54) CYP2C19HIF1AKCNN4TAAR1MAPK1
SCHEMBL28366627 0.73 TSHR (0.50) CYP2C19HIF1AKCNN4TSHRTAAR1
SCHEMBL17710390 0.73 CYP2C19 (0.47) CYP2C19HIF1AKCNN4TSHRTAAR1
SCHEMBL713410 0.72 MAPK1 (0.40) CYP2C19HIF1AKCNN4TSHRTAAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed