SCHEMBL707329

SCHEMBL707329

CCC([SiH2]F)(c1ccccc1)c1ccccc1

nearest known ligand 0.46

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 5/20 0.45
TSHR P16473 2/20 0.39
ALDH1A1 P00352 1/20 0.39
TAAR1 Q96RJ0 1/20 0.37
MAPK1 P28482 1/20 0.34
NR3C2 P08235 1/20 0.34
TP53 P04637 1/20 0.33
KIF11 P52732 1/20 0.33
LMNA P02545 1/20 0.33
HTT P42858 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
CYP2C19 P33261 1/20 0.33
HIF1A Q16665 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705992 0.77 CYP2C19 (0.42) KCNN4TSHRALDH1A1TAAR1MAPK1
SCHEMBL704484 0.77 KCNN4 (0.40) KCNN4TSHRALDH1A1TAAR1MAPK1
SCHEMBL4620006 0.77 KCNN4 (0.40) KCNN4ALDH1A1TAAR1MAPK1KIF11
SCHEMBL713410 0.72 MAPK1 (0.40) KCNN4TSHRALDH1A1TAAR1MAPK1
SCHEMBL27943204 0.70 KIF11 (0.39) KCNN4TSHRALDH1A1KIF11LMNA
SCHEMBL703035 0.70 KCNN4 (0.34) KCNN4ALDH1A1TAAR1MAPK1KIF11
SCHEMBL706961 0.69 KCNN4 (0.44) KCNN4TSHRALDH1A1TAAR1MAPK1
SCHEMBL863752 0.69 KCNN4 (0.44) KCNN4TSHRALDH1A1TAAR1MAPK1
SCHEMBL28366627 0.69 TSHR (0.50) KCNN4TSHRALDH1A1TAAR1MAPK1
SCHEMBL13440 0.69 TSHR (0.50) KCNN4TSHRALDH1A1TAAR1MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed