SCHEMBL704484

SCHEMBL704484

CCC([SiH2]Br)(c1ccccc1)c1ccccc1

nearest known ligand 0.46

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 4/20 0.40
TAAR1 Q96RJ0 1/20 0.37
MAPK1 P28482 1/20 0.34
TSHR P16473 2/20 0.33
ALDH1A1 P00352 2/20 0.33
TP53 P04637 1/20 0.33
CYP2C19 P33261 1/20 0.33
HIF1A Q16665 1/20 0.33
ALOX15 P16050 1/20 0.32
MEN1 O00255 2/20 0.32
KMT2A Q03164 2/20 0.32
KIF11 P52732 1/20 0.32
KDM4E B2RXH2 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707329 0.77 KCNN4 (0.45) KCNN4TAAR1MAPK1TSHRALDH1A1
SCHEMBL705992 0.77 CYP2C19 (0.42) KCNN4TAAR1MAPK1TSHRALDH1A1
SCHEMBL4620006 0.77 KCNN4 (0.40) KCNN4TAAR1MAPK1ALDH1A1CYP2C19
SCHEMBL713410 0.72 MAPK1 (0.40) KCNN4TAAR1MAPK1TSHRALDH1A1
SCHEMBL5740730 0.72 TAAR1 (0.50) KCNN4TAAR1MAPK1TSHRALDH1A1
SCHEMBL6682491 0.70 KCNN4 (0.46) KCNN4TAAR1MAPK1TSHRALDH1A1
SCHEMBL2121739 0.70 TAAR1 (0.48) KCNN4TAAR1MAPK1TSHRALDH1A1
SCHEMBL707097 0.70 MAPK1 (0.46) KCNN4TAAR1MAPK1TSHRALDH1A1
SCHEMBL27943204 0.70 KIF11 (0.39) KCNN4TSHRALDH1A1CYP2C19MEN1
SCHEMBL703035 0.70 KCNN4 (0.34) KCNN4TAAR1MAPK1ALDH1A1CYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed