SCHEMBL713410

SCHEMBL713410

CCC([SiH2]OC(C)(C)C)(c1ccccc1)c1ccccc1

nearest known ligand 0.42

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.40
TAAR1 Q96RJ0 2/20 0.38
ALDH1A1 P00352 1/20 0.38
ALOX15 P16050 1/20 0.38
KCNN4 O15554 1/20 0.36
RIPK1 Q13546 2/20 0.35
TP53 P04637 1/20 0.34
TSHR P16473 1/20 0.34
CYP2C19 P33261 1/20 0.34
HIF1A Q16665 1/20 0.34
AOC3 Q16853 1/20 0.33
SLC6A2 P23975 1/20 0.33
CYP1A2 P05177 1/20 0.33
CYP3A4 P08684 1/20 0.33
RECQL P46063 1/20 0.33
KDM4E B2RXH2 1/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703035 0.77 KCNN4 (0.34) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL706549 0.77 MAPK1 (0.44) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL707772 0.74 KCNN4 (0.38) ALDH1A1KCNN4CYP2C19HIF1AKMT2A
SCHEMBL704484 0.72 KCNN4 (0.40) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL707329 0.72 KCNN4 (0.45) MAPK1TAAR1ALDH1A1KCNN4TP53
SCHEMBL705992 0.72 CYP2C19 (0.42) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL4620006 0.72 KCNN4 (0.40) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL28331955 0.69 MAPK1 (0.41) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL28366627 0.69 TSHR (0.50) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL18297903 0.68 TSHR (0.43) MAPK1TAAR1ALDH1A1TP53TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed