SCHEMBL706191

SCHEMBL706191

CCCCC(O[SiH2]OC(CCCC)c1ccccc1)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
POLB P06746 2/20 0.41
ALDH1A1 P00352 2/20 0.40
KDM4E B2RXH2 1/20 0.40
SLC7A5 Q01650 1/20 0.39
CASR P41180 1/20 0.38
SLC6A4 P31645 1/20 0.38
SIGMAR1 Q99720 1/20 0.37
MME P08473 1/20 0.37
OPRM1 P35372 1/20 0.36
OPRD1 P41143 1/20 0.36
OPRK1 P41145 1/20 0.36
OPRL1 P41146 1/20 0.36
GPR88 Q9GZN0 1/20 0.36
MAPT P10636 1/20 0.36
HTR2A P28223 1/20 0.36
LMNA P02545 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704365 0.89 AOC3 (0.41) POLBSLC6A4OPRM1OPRK1GPR88
SCHEMBL7453749 0.82 POLB (0.44) POLBALDH1A1KDM4ESLC7A5CASR
SCHEMBL6254117 0.81 POLB (0.42) POLBALDH1A1KDM4ESLC7A5CASR
SCHEMBL106513 0.80 LMNA (0.45) SLC7A5SLC6A4LMNA
SCHEMBL27281580 0.79 CASR (0.46) POLBALDH1A1KDM4ESLC7A5CASR
SCHEMBL27487946 0.79 POLB (0.45) POLBALDH1A1KDM4ESLC7A5CASR
SCHEMBL703009 0.79 POLB (0.41) POLBALDH1A1KDM4ESLC7A5CASR
SCHEMBL19809157 0.79 SLC6A4 (0.39) POLBSLC6A4OPRM1OPRK1HTR2A
SCHEMBL8750393 0.78 POLB (0.44) POLBALDH1A1KDM4ESLC7A5CASR
SCHEMBL27299983 0.78 SLC6A4 (0.62) KDM4ESLC7A5SLC6A4SIGMAR1OPRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed