SCHEMBL704365

SCHEMBL704365

CCCC(O[SiH2]OC(CCC)c1ccccc1)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
AOC3 Q16853 2/20 0.41
SLC6A4 P31645 4/20 0.40
LMNA P02545 2/20 0.38
SLC6A2 P23975 4/20 0.36
GPR88 Q9GZN0 2/20 0.36
CYP1A2 P05177 4/20 0.36
CYP3A4 P08684 4/20 0.36
CYP2D6 P10635 4/20 0.36
HTR2A P28223 4/20 0.36
HRH1 P35367 4/20 0.36
TSHR P16473 3/20 0.36
SLC6A3 Q01959 3/20 0.36
KMT2A Q03164 2/20 0.36
CHRM1 P11229 2/20 0.36
ADRA2B P18089 2/20 0.36
HTR2C P28335 2/20 0.36
OPRM1 P35372 2/20 0.36
DRD3 P35462 2/20 0.36
OPRK1 P41145 2/20 0.36
HTR2B P41595 2/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19809157 0.89 SLC6A4 (0.39) AOC3SLC6A4LMNASLC6A2CYP1A2
SCHEMBL706191 0.89 POLB (0.41) SLC6A4LMNAGPR88HTR2AOPRM1
SCHEMBL106513 0.83 LMNA (0.45) SLC6A4LMNA
SCHEMBL10481246 0.81 AOC3 (0.44) AOC3SLC6A4LMNASLC6A2CYP1A2
SCHEMBL198055 0.81 AOC3 (0.44) AOC3SLC6A4LMNASLC6A2CYP1A2
SCHEMBL1098807 0.79 AOC3 (0.43) AOC3SLC6A4LMNASLC6A2CYP1A2
SCHEMBL11784642 0.78 AOC3 (0.46) AOC3SLC6A4LMNASLC6A2CYP1A2
SCHEMBL5799572 0.78 IDO1 (0.49) AOC3SLC6A4LMNASLC6A2HTR2A
SCHEMBL21625269 0.78 CASR (0.44) AOC3SLC6A4LMNASLC6A2CYP1A2
SCHEMBL705168 0.78 AOC3 (0.42) AOC3SLC6A4LMNASLC6A2CYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
EP-0042208-B1 METHOD FOR PRODUCING HYDROPHOBIC REINFORCING SILICA FILLERS DOW CORNING CORPORATION (US) 1985-12-04 EP disclosed
EP-0043640-B1 OPTICALLY CLEAR SILICONE COMPOSITIONS CURABLE TO ELASTOMERS DOW CORNING CORPORATION (US) 1985-10-16 EP disclosed
US-4418165-A POLYDIORGANOSILOXANES AND SILICA FILLER DOW CORNING CORPORATION (US) 1983-11-29 US disclosed
US-4344800-A AGING, BASIC CATALYSTS DOW CORNING CORPORATION (US) 1982-08-17 US disclosed
EP-0042208-A2 Method for producing hydrophobic reinforcing silica fillers DOW CORNING CORPORATION (US) 1981-12-23 EP disclosed
WO-1981003485-A1 METHOD FOR PRODUCING HYDROPHOBIC REINFORCING SILICA FILLERS AND FILLERS OBTAINED THEREBY DOW CORNING (US) 1981-12-10 WO disclosed