SCHEMBL706317

SCHEMBL706317

c1ccc(C(CCCO[SiH2]CCC[SiH2]OCCCC(c2ccccc2)c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.47

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
HRH1 P35367 6/20 0.47
HTR2A P28223 6/20 0.47
SIGMAR1 Q99720 4/20 0.41
CYP19A1 P11511 3/20 0.36
KCNH2 Q12809 1/20 0.35
GRM2 Q14416 1/20 0.35
GRM3 Q14832 1/20 0.35
TAAR1 Q96RJ0 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707445 0.96 HRH1 (0.47) HRH1HTR2ASIGMAR1CYP19A1KCNH2
SCHEMBL704019 0.94 HRH1 (0.48) HRH1HTR2ASIGMAR1CYP19A1KCNH2
SCHEMBL707300 0.91 HRH1 (0.44) HRH1HTR2ASIGMAR1CYP19A1KCNH2
SCHEMBL706466 0.87 HRH1 (0.48) HRH1HTR2ASIGMAR1CYP19A1KCNH2
SCHEMBL704101 0.87 HRH1 (0.44) HRH1HTR2ASIGMAR1CYP19A1KCNH2
SCHEMBL704049 0.82 HRH1 (0.45) HRH1HTR2ASIGMAR1KCNH2TAAR1
SCHEMBL702750 0.81 SIGMAR1 (0.41) HRH1HTR2ASIGMAR1KCNH2
SCHEMBL3481390 0.81 SIGMAR1 (0.41) HRH1HTR2ASIGMAR1KCNH2
SCHEMBL704183 0.79 CA12 (0.40) HRH1HTR2ASIGMAR1TAAR1
SCHEMBL708049 0.78 HRH1 (0.47) HRH1HTR2ASIGMAR1CYP19A1KCNH2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed