SCHEMBL3481390

SCHEMBL3481390

CCCC[SiH2]OCCC(c1ccccc1)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 1/20 0.41
HRH1 P35367 6/20 0.40
HTR2A P28223 6/20 0.40
CALM1 P0DP23 1/20 0.36
LTA4H P09960 2/20 0.36
AOC3 Q16853 1/20 0.36
LMNA P02545 2/20 0.35
CYP3A4 P08684 2/20 0.35
CHRM2 P08172 1/20 0.35
HTR1A P08908 1/20 0.35
ADRA2A P08913 1/20 0.35
ADORA3 P0DMS8 1/20 0.35
CHRM1 P11229 1/20 0.35
SMPD1 P17405 1/20 0.35
DRD1 P21728 1/20 0.35
TBXA2R P21731 1/20 0.35
SLC6A2 P23975 1/20 0.35
SLC6A4 P31645 1/20 0.35
ADRA1A P35348 1/20 0.35
OPRM1 P35372 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481513 0.90 HRH1 (0.40) SIGMAR1HRH1HTR2AAOC3LMNA
SCHEMBL707300 0.90 HRH1 (0.44) SIGMAR1HRH1HTR2ALMNACYP3A4
SCHEMBL704101 0.90 HRH1 (0.44) SIGMAR1HRH1HTR2ALMNACYP3A4
SCHEMBL702750 0.87 SIGMAR1 (0.41) SIGMAR1HRH1HTR2ACALM1LTA4H
SCHEMBL704049 0.86 HRH1 (0.45) SIGMAR1HRH1HTR2ALMNACYP3A4
SCHEMBL3481757 0.83 HTR2A (0.38) SIGMAR1HRH1HTR2ALTA4HAOC3
SCHEMBL702334 0.83 HRH1 (0.40) SIGMAR1HRH1HTR2AAOC3LMNA
SCHEMBL707445 0.81 HRH1 (0.47) SIGMAR1HRH1HTR2AKCNH2
SCHEMBL706317 0.81 HRH1 (0.47) SIGMAR1HRH1HTR2AKCNH2
SCHEMBL704019 0.79 HRH1 (0.48) SIGMAR1HRH1HTR2AKCNH2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed