SCHEMBL702750

SCHEMBL702750

CCCCO[SiH2]CCC(c1ccccc1)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 1/20 0.41
HRH1 P35367 6/20 0.40
HTR2A P28223 6/20 0.40
LTA4H P09960 2/20 0.40
CALM1 P0DP23 1/20 0.39
AOC3 Q16853 1/20 0.36
CYP1A2 P05177 2/20 0.35
CYP2C19 P33261 2/20 0.35
CYP2C9 P11712 1/20 0.35
CHRM2 P08172 1/20 0.35
HTR1A P08908 1/20 0.35
ADRA2A P08913 1/20 0.35
ADORA3 P0DMS8 1/20 0.35
CHRM1 P11229 1/20 0.35
SMPD1 P17405 1/20 0.35
DRD1 P21728 1/20 0.35
TBXA2R P21731 1/20 0.35
SLC6A2 P23975 1/20 0.35
SLC6A4 P31645 1/20 0.35
ADRA1A P35348 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702334 0.90 HRH1 (0.40) SIGMAR1HRH1HTR2AAOC3CYP1A2
SCHEMBL3481390 0.87 SIGMAR1 (0.41) SIGMAR1HRH1HTR2ALTA4HCALM1
SCHEMBL3481513 0.83 HRH1 (0.40) SIGMAR1HRH1HTR2AAOC3CYP1A2
SCHEMBL705098 0.83 LTA4H (0.42) SIGMAR1HTR2ALTA4HCALM1CYP1A2
SCHEMBL705237 0.82 HRH1 (0.42) SIGMAR1HRH1HTR2AAOC3CYP1A2
SCHEMBL704019 0.82 HRH1 (0.48) SIGMAR1HRH1HTR2AKCNH2
SCHEMBL706317 0.81 HRH1 (0.47) SIGMAR1HRH1HTR2AKCNH2
SCHEMBL707445 0.81 HRH1 (0.47) SIGMAR1HRH1HTR2AKCNH2
SCHEMBL704101 0.79 HRH1 (0.44) SIGMAR1HRH1HTR2ACYP1A2CYP2C19
SCHEMBL707300 0.79 HRH1 (0.44) SIGMAR1HRH1HTR2ACYP1A2CYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed