SCHEMBL706387

SCHEMBL706387

CCCCO[Si](CC)(OCCCC)c1ccccc1

nearest known ligand 0.44

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.44
CYP1A2 P05177 2/20 0.39
CYP2C9 P11712 2/20 0.39
CYP2C19 P33261 2/20 0.39
TSHR P16473 3/20 0.38
TDP1 Q9NUW8 2/20 0.38
L3MBTL1 Q9Y468 2/20 0.38
CYP2D6 P10635 2/20 0.38
CYP19A1 P11511 1/20 0.38
ALDH1A1 P00352 2/20 0.35
CYP3A4 P08684 2/20 0.35
TLR8 Q9NR97 1/20 0.35
MAPK1 P28482 1/20 0.35
FGFR1 P11362 1/20 0.35
ABCB1 P08183 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29066985 0.95 LTA4H (0.41) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL19809285 0.94 LTA4H (0.44) LTA4HTSHRALDH1A1CYP3A4TLR8
SCHEMBL705317 0.90 CYP2D6 (0.37) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL706144 0.89 LTA4H (0.44) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL706157 0.89 LTA4H (0.44) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL706072 0.88 LMNA (0.37) LTA4HALDH1A1TLR8FGFR1
SCHEMBL710735 0.87 LTA4H (0.43) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL702248 0.87 LTA4H (0.43) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL706281 0.87 LTA4H (0.43) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL707497 0.87 LTA4H (0.43) LTA4HCYP1A2CYP2C9CYP2C19TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-7604866-B2 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2009-10-20 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-20060269724-A1 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2006-11-30 US disclosed
US-20040077757-A1 Coating composition for use in producing an insulating thin film ASAHI KASEI KABUSHIKI KAISHA (JP) 2004-04-22 US disclosed