SCHEMBL706440

SCHEMBL706440

CC(=O)O[Si](CCC[Si](OC(C)=O)(C(C)(C)C)C(C)(C)C)(C(C)(C)C)C(C)(C)C

nearest known ligand 0.32

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
GAA P10253 1/20 0.32
KDM4E B2RXH2 1/20 0.31
MAPK1 P28482 1/20 0.31
HIF1A Q16665 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704624 0.95 GAA (0.32) GAAKDM4EMAPK1HIF1A
SCHEMBL704938 0.91 ALDH1A1 (0.36) GAA
SCHEMBL706474 0.81 GAA (0.34) GAA
SCHEMBL706587 0.77 GAA (0.32) GAAKDM4EMAPK1HIF1A
SCHEMBL705376 0.73 GAA (0.32) GAAKDM4EMAPK1HIF1A
SCHEMBL711587 0.71 GAA (0.34) GAA
SCHEMBL704685 0.70 KDM4E (0.36) KDM4EMAPK1HIF1A
SCHEMBL706117 0.69 KDM4E (0.35) KDM4EMAPK1HIF1A
SCHEMBL712067 0.69 KDM4E (0.35) KDM4EMAPK1HIF1A
SCHEMBL713405 0.67 ALDH1A1 (0.35) GAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed