SCHEMBL706474

SCHEMBL706474

CC(=O)O[Si](C[Si](OC(C)=O)(C(C)(C)C)C(C)(C)C)(C(C)(C)C)C(C)(C)C

nearest known ligand 0.34

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
GAA P10253 1/20 0.34
ALDH1A1 P00352 3/20 0.31
LMNA P02545 1/20 0.31
HSD17B10 Q99714 1/20 0.31
TSHR P16473 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704938 0.85 ALDH1A1 (0.36) GAAALDH1A1LMNAHSD17B10TSHR
SCHEMBL704624 0.81 GAA (0.32) GAA
SCHEMBL706440 0.81 GAA (0.32) GAA
SCHEMBL702411 0.75 GAA (0.34) GAAALDH1A1LMNAHSD17B10TSHR
SCHEMBL707232 0.70 ALDH1A1 (0.35) GAAALDH1A1TSHR
SCHEMBL476038 0.70 ALDH1A1 (0.35) GAAALDH1A1TSHR
SCHEMBL713405 0.70 ALDH1A1 (0.35) GAAALDH1A1LMNAHSD17B10TSHR
SCHEMBL711587 0.70 GAA (0.34) GAAALDH1A1LMNAHSD17B10TSHR
SCHEMBL475925 0.69 ALDH1A1 (0.33) GAAALDH1A1TSHR
SCHEMBL704793 0.67 ALDH1A1 (0.37) ALDH1A1LMNAHSD17B10TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed