SCHEMBL706592

SCHEMBL706592

CO[Si](OC)(c1ccccc1)c1ccc([Si](OC)(OC)c2ccccc2)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.41
ESR2 Q92731 1/20 0.41
CA4 P22748 2/20 0.39
CA12 O43570 1/20 0.35
CA1 P00915 1/20 0.35
CA2 P00918 1/20 0.35
CA7 P43166 1/20 0.35
CA9 Q16790 1/20 0.35
CA14 Q9ULX7 1/20 0.35
POLB P06746 2/20 0.34
ALDH1A1 P00352 3/20 0.33
NR1H2 P55055 2/20 0.33
NR1H3 Q13133 2/20 0.33
LTA4H P09960 2/20 0.33
CYP1A2 P05177 1/20 0.33
CYP2C19 P33261 1/20 0.33
TSHR P16473 4/20 0.32
MEN1 O00255 1/20 0.32
MAPT P10636 1/20 0.32
KMT2A Q03164 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27596877 0.97 CA4 (0.41) ESR1ESR2CA4CA12CA1
SCHEMBL49008 0.97 CA4 (0.41) ESR1ESR2CA4CA12CA1
SCHEMBL11588483 0.94 CA1 (0.41) ESR1ESR2CA4CA12CA1
SCHEMBL27743669 0.94 CA4 (0.39) ESR1ESR2CA4CA12CA1
SCHEMBL5419766 0.93 ESR1 (0.37) ESR1ESR2CA4CA12CA1
SCHEMBL23000913 0.91 ALDH1A1 (0.41) ESR1ESR2ALDH1A1CYP1A2TSHR
SCHEMBL5410043 0.91 ESR1 (0.40) ESR1ESR2CA4POLBNR1H2
SCHEMBL3481943 0.91 ACHE (0.43) ESR1ESR2CA4POLBALDH1A1
SCHEMBL5416836 0.91 ESR1 (0.35) ESR1ESR2CA4POLB
SCHEMBL28085512 0.90 ESR1 (0.38) ESR1ESR2CA4CA12CA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4408906-B1 METHOD FOR PREPARING LOW-SILANOL POLYORGANOSILOXANES WACKER CHEMIE AG (DE) 2025-05-28 EP disclosed
EP-4384392-B1 METAL-PLATED LAMINATES CONTAINING POLYORGANOSILOXANES WACKER CHEMIE AG (DE) 2025-03-19 EP disclosed
US-20240392072-A1 METHOD FOR PREPARING LOW-SILANOL POLYORGANOSILOXANES WACKER CHEMIE AG (DE) 2024-11-28 US disclosed
US-20240336743-A1 METAL-PLATED LAMINATES CONTAINING POLYORGANOSILOXANES WACKER CHEMIE AG (DE) 2024-10-10 US disclosed
EP-4408906-A1 METHOD FOR PREPARING LOW-SILANOL POLYORGANOSILOXANES Wacker Chemie AG (DE) 2024-08-07 EP disclosed
EP-4384392-A1 METAL-PLATED LAMINATES CONTAINING POLYORGANOSILOXANES Wacker Chemie AG (DE) 2024-06-19 EP disclosed
CN-117651641-A Metal-plated laminates containing polyorganosiloxanes 瓦克化学股份公司 2024-03-05 CN disclosed
CN-107615168-B Radiation-sensitive composition 日产化学工业株式会社 2023-12-19 CN disclosed
CN-117008420-A Radiation-sensitive composition 日产化学工业株式会社 2023-11-07 CN disclosed
WO-2023051912-A1 METHOD FOR PREPARING LOW-SILANOL POLYORGANOSILOXANES WACKER CHEMIE AG (DE) 2023-04-06 WO disclosed
WO-2023016649-A1 METAL-PLATED LAMINATES CONTAINING POLYORGANOSILOXANES WACKER CHEMIE AG (DE) 2023-02-16 WO disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed