SCHEMBL706601

SCHEMBL706601

FC(C(F)(F)F)C(F)(F)Oc1ccccc1

nearest known ligand 0.62

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.62
ALDH1A1 P00352 2/20 0.62
HSD17B10 Q99714 1/20 0.62
RECQL P46063 1/20 0.36
CETP P11597 6/20 0.35
LTA4H P09960 1/20 0.35
NSD2 O96028 1/20 0.33
HSP90AA1 P07900 1/20 0.33
HKDC1 Q2TB90 1/20 0.33
TLR9 Q9NR96 1/20 0.33
RAB9A P51151 1/20 0.33
CA4 P22748 1/20 0.32
LMNA P02545 1/20 0.32
POLB P06746 1/20 0.32
MEN1 O00255 1/20 0.32
USP2 O75604 1/20 0.32
MAPT P10636 1/20 0.32
ALOX15 P16050 1/20 0.32
KMT2A Q03164 1/20 0.32
CYP1A2 P05177 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11679555 0.89 ALDH1A1 (0.69) TSHRALDH1A1HSD17B10RECQLMEN1
SCHEMBL7988352 0.88 ALDH1A1 (0.60) TSHRALDH1A1HSD17B10CETPMEN1
SCHEMBL22116087 0.85 ALDH1A1 (0.51) TSHRALDH1A1HSD17B10RECQLCETP
SCHEMBL194052 0.84 TSHR (0.44) TSHRALDH1A1HSD17B10CETPLTA4H
SCHEMBL7751671 0.80 ALDH1A1 (0.46) TSHRALDH1A1HSD17B10RECQLMEN1
SCHEMBL14241262 0.80 TSHR (0.42) TSHRALDH1A1HSD17B10CETPLTA4H
SCHEMBL6355243 0.79 ALDH1A1 (0.54) TSHRALDH1A1HSD17B10RECQL
SCHEMBL1361753 0.79 ALDH1A1 (0.59) TSHRALDH1A1HSD17B10RECQLCETP
SCHEMBL6601005 0.79 ALDH1A1 (0.59) TSHRALDH1A1HSD17B10RECQLMEN1
SCHEMBL7705180 0.77 ALDH1A1 (0.45) TSHRALDH1A1HSD17B10RECQL

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-113929562-B Preparation method of fluoroether 衢州氟硅技术研究院 2024-07-26 CN disclosed
CN-113929562-A Preparation method of fluoroether 衢州氟硅技术研究院 2022-01-14 CN disclosed
CN-113544204-A Method for separating a mixture of solids 索尔维特殊聚合物美国有限责任公司 2021-10-22 CN disclosed
US-8465850-B2 Method for the application of active materials onto a surface and devices made with such methods E I DU PONT DE NEMOURS AND COMPANY (US) 2013-06-18 US disclosed
US-8465850-B2 Method for the application of active materials onto a surface and devices made with such methods E I DU PONT DE NEMOURS AND COMPANY (US) 2013-06-18 US disclosed
US-8383192-B2 Process for making contained layers and devices made with same E. I. DU PONT DE NEMOURS AND COMPANY (US) 2013-02-26 US disclosed
US-8287766-B2 depositing fluorinated aryl ethers and polyanilines or polythiophenes combined with fluorinated polysulfonic acids and/or mixtures, onto glass substrates, useful in organic electronic devices; organic light emitting diodes E I DU PONT DE NEMOURS AND COMPANY (US) 2012-10-16 US disclosed
US-8124172-B2 Process for making contained layers and devices made with same E.I. DU PONT DE NEMOURS AND COMPANY (US) 2012-02-28 US disclosed
US-20110180761-A1 METHOD FOR THE APPLICATION OF ACTIVE MATERIALS ONTO A SURFACES AND DEVICES MADE WITH SUCH METHODS E. I. DU PONT DE NEMOURS AND COMPANY (US) 2011-07-28 US disclosed
US-20110183268-A1 PROCESS FOR MAKING CONTAINED LAYERS AND DEVICES MADE WITH SAME E. I. DU PONT DE NEMOURS AND COMPANY DUPONT DISPLAYS INC (US) 2011-07-28 US disclosed
WO-2007106101-A2 PROCESS FOR MAKING CONTAINED LAYERS AND DEVICES MADE WITH SAME E. I. DU PONT DE NEMOURS AND COMPANY (US) 2007-09-20 WO disclosed
US-20070218582-A1 Process for making contained layers and devices made with same LG CHEM, LTD. (KR) 2007-09-20 US disclosed
US-20070205409-A1 Process for making contained layers and devices made with same E. I. DU PONT DE NEMOURS AND COMPANY 2007-09-06 US disclosed
US-20050269550-A1 Method for the application of active materials onto active surfaces and devices made with such methods PETROV VIACHESLAV A 2005-12-08 US disclosed
US-20050062021-A1 Method for the application of active materials onto active surfaces and devices made with such methods LG CHEM, LTD. (KR) 2005-03-24 US disclosed
EP-0629216-A4 FLUORINATED RESINS WITH LOW DIELECTRIC CONSTANT. US HEALTH (US) 1995-05-31 EP disclosed
US-5405677-A Fluorinated resins with low dielectric constant THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY (US) 1995-04-11 US disclosed
EP-0629216-A1 FLUORINATED RESINS WITH LOW DIELECTRIC CONSTANT THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY OF THE NAVY (US) 1994-12-21 EP disclosed
US-5292927-A Fluorinated resins with low dielectric constant THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY (US) 1994-03-08 US disclosed
WO-1993017052-A1 FLUORINATED RESINS WITH LOW DIELECTRIC CONSTANT THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY (US) 1993-09-02 WO disclosed