SCHEMBL706644

SCHEMBL706644

CCCO[Si](CC)(CC)c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 2/20 0.37
KMT2A Q03164 2/20 0.37
LMNA P02545 2/20 0.37
ALDH1A1 P00352 4/20 0.34
LTA4H P09960 2/20 0.34
HPGD P15428 2/20 0.34
GAA P10253 2/20 0.31
TP53 P04637 1/20 0.31
TLR8 Q9NR97 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
KDM4E B2RXH2 1/20 0.31
FGFR1 P11362 1/20 0.30
MAPT P10636 1/20 0.30
HTT P42858 1/20 0.30
ATM Q13315 1/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482249 0.90 LMNA (0.34) MEN1KMT2ALMNAALDH1A1LTA4H
SCHEMBL703935 0.89 ESR1 (0.33)
SCHEMBL706327 0.88 LTA4H (0.44) MEN1KMT2ALMNAALDH1A1LTA4H
SCHEMBL3482212 0.87 LTA4H (0.37) MEN1KMT2ALMNAALDH1A1LTA4H
SCHEMBL708502 0.86 LMNA (0.36) MEN1KMT2ALMNAALDH1A1LTA4H
SCHEMBL533990 0.83 LTA4H (0.34) ALDH1A1LTA4HHPGDTP53SMN1; SMN2
SCHEMBL708788 0.82 LTA4H (0.39) MEN1KMT2ALMNAALDH1A1LTA4H
SCHEMBL28062834 0.80 SMN1; SMN2 (0.33) MEN1KMT2ALMNAALDH1A1HPGD
SCHEMBL28062913 0.80 MAPT (0.33) LMNAALDH1A1HPGDSMN1; SMN2KDM4E
SCHEMBL15302077 0.80 MEN1 (0.33) MEN1KMT2ALMNAALDH1A1LTA4H

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-7604866-B2 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2009-10-20 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-20060269724-A1 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2006-11-30 US disclosed
US-20040077757-A1 Coating composition for use in producing an insulating thin film ASAHI KASEI KABUSHIKI KAISHA (JP) 2004-04-22 US disclosed