SCHEMBL706665

SCHEMBL706665

CC[Si](CC)(C[Si](CC)(CC)OC(C)=O)OC(C)=O

nearest known ligand 0.38

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.38
LMNA P02545 1/20 0.38
HSD17B10 Q99714 1/20 0.38
TSHR P16473 2/20 0.32
TDP1 Q9NUW8 1/20 0.32
ALOX15 P16050 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL476015 0.89 ALDH1A1 (0.41) ALDH1A1LMNAHSD17B10TSHRTDP1
SCHEMBL12898556 0.86 ALDH1A1 (0.32) ALDH1A1LMNAHSD17B10
SCHEMBL707081 0.84 ALDH1A1 (0.38) ALDH1A1LMNAHSD17B10TSHRTDP1
Ether SCHEMBL10866831 0.80 ALDH1A1 (0.43) ALDH1A1LMNAHSD17B10TSHRALOX15
SCHEMBL706824 0.80 ALDH1A1 (0.35) ALDH1A1LMNAHSD17B10
SCHEMBL705769 0.80 ALDH1A1 (0.35) ALDH1A1LMNAHSD17B10
SCHEMBL707205 0.80 ALDH1A1 (0.35) ALDH1A1LMNAHSD17B10
SCHEMBL703864 0.77 ALDH1A1 (0.41) ALDH1A1LMNAHSD17B10TSHR
SCHEMBL12898580 0.75 ALDH1A1 (0.31) ALDH1A1LMNAHSD17B10
SCHEMBL476034 0.74 ALDH1A1 (0.38) ALDH1A1LMNAHSD17B10TSHRTDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed