Tetrahydrofuran

Tetrahydrofuran

SCHEMBL7067246

C1CCOC1.CC(C)O[Al](OC(C)C)OC(C)C

nearest known ligand 0.42

Full drug profile on Sugi Atlas →

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL35058 0.76
Tetrahydrofuran SCHEMBL754746 0.75 ALDH1A1 (0.50) ALDH1A1
Tetrahydrofuran SCHEMBL11521890 0.73
SCHEMBL1268918 0.73
SCHEMBL6692296 0.73
SCHEMBL6829599 0.72 ALDH1A1 (0.47) ALDH1A1
Tetrahydrofuran SCHEMBL6793997 0.70 ALDH1A1 (0.44) ALDH1A1
Tetrahydrofuran SCHEMBL28820736 0.70
Lithium Ion SCHEMBL6692293 0.70
Tetrahydrofuran SCHEMBL6816688 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6620670-B2 Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 APPLIED MATERIALS, INC. 2003-09-16 US claimed
US-20030139005-A1 PROCESS CONDITIONS AND PRECURSORS FOR ATOMIC LAYER DEPOSITION (ALD) OF AL2O3 APPLIED MATERIALS, INC. 2003-07-24 US claimed
US-6620670-B2 Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 APPLIED MATERIALS, INC. 2003-09-16 US disclosed
US-20030139005-A1 PROCESS CONDITIONS AND PRECURSORS FOR ATOMIC LAYER DEPOSITION (ALD) OF AL2O3 APPLIED MATERIALS, INC. 2003-07-24 US disclosed