Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA4 | P22748 | 1/20 | 0.42 |
| ▸ | LTA4H | P09960 | 3/20 | 0.39 |
| ▸ | TSHR | P16473 | 1/20 | 0.39 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.37 |
| ▸ | RIPK1 | Q13546 | 1/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.34 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.34 |
| ▸ | ATM | Q13315 | 1/20 | 0.33 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.33 |
| ▸ | KCNA3 | P22001 | 1/20 | 0.33 |
| ▸ | CA5A | P35218 | 1/20 | 0.32 |
| ▸ | CA5B | Q9Y2D0 | 1/20 | 0.32 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.32 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.32 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.31 |
| ▸ | LMNA | P02545 | 1/20 | 0.31 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.31 |
| ▸ | GLA | P06280 | 1/20 | 0.31 |
| ▸ | MAPT | P10636 | 1/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL429409 | 0.82 | CA4 (0.43) | CA4LTA4HTSHRMAPK1RIPK1 | |
| SCHEMBL426731 | 0.80 | CA4 (0.42) | CA4LTA4HTSHRMAPK1RIPK1 | |
| SCHEMBL2368966 | 0.78 | PREP (0.45) | CA4LTA4HTSHRMAPK1RIPK1 | |
| SCHEMBL18417859 | 0.76 | CA4 (0.39) | CA4LTA4HTSHRMAPK1RIPK1 | |
| SCHEMBL7699482 | 0.76 | CA4 (0.39) | CA4LTA4HTSHRMAPK1RIPK1 | |
| SCHEMBL19816777 | 0.76 | CA4 (0.44) | CA4LTA4HTSHRMAPK1RIPK1 | |
| SCHEMBL11515028 | 0.75 | FBP1 (0.36) | KMT2A | |
| SCHEMBL707620 | 0.75 | CA4 (0.37) | CA4LTA4HTSHRMAPK1RIPK1 | |
| SCHEMBL711562 | 0.75 | CA4 (0.37) | CA4LTA4HTSHRMAPK1RIPK1 | |
| SCHEMBL18417888 | 0.75 | ALDH1A1 (0.40) | CA4LTA4HTSHRMAPK1RIPK1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11059920-B2 | Process for producing high cis-1,4-polydiene with lanthanide-based catalyst compositions | BRIDGESTONE CORPORATION (JP) | 2021-07-13 | — | — | US | claimed |
| US-20190169330-A1 | Process For Producing High Cis-1,4-Polydiene With Lanthanide-Based Catalyst Compositions | BRIDGESTONE CORPORATION (JP) | 2019-06-06 | — | — | US | claimed |
| EP-3491030-A1 | PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS | Bridgestone Corporation (JP) | 2019-06-05 | — | — | EP | claimed |
| WO-2018022994-A1 | PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS | BRIDGESTONE CORPORATION (JP) | 2018-02-01 | — | — | WO | claimed |
| CN-109715680-B | Process for preparing high cis-1, 4-polydienes with lanthanide-based catalyst compositions | 株式会社普利司通 | 2021-10-19 | — | — | CN | disclosed |
| US-11059920-B2 | Process for producing high cis-1,4-polydiene with lanthanide-based catalyst compositions | BRIDGESTONE CORPORATION (JP) | 2021-07-13 | — | — | US | disclosed |
| EP-3491030-B1 | PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS | BRIDGESTONE CORP (JP) | 2021-03-24 | — | — | EP | disclosed |
| US-20190169330-A1 | Process For Producing High Cis-1,4-Polydiene With Lanthanide-Based Catalyst Compositions | BRIDGESTONE CORPORATION (JP) | 2019-06-06 | — | — | US | disclosed |
| EP-3491030-A1 | PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS | Bridgestone Corporation (JP) | 2019-06-05 | — | — | EP | disclosed |
| WO-2018022994-A1 | PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS | BRIDGESTONE CORPORATION (JP) | 2018-02-01 | — | — | WO | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |