SCHEMBL426731

SCHEMBL426731

CC(C)(C)[Si](Oc1ccccc1)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.42

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.42
LTA4H P09960 3/20 0.39
TSHR P16473 1/20 0.39
MAPK1 P28482 1/20 0.37
RIPK1 Q13546 1/20 0.35
ALDH1A1 P00352 1/20 0.34
ALOX15 P16050 1/20 0.34
ATM Q13315 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
KCNA3 P22001 1/20 0.33
CYP2D6 P10635 2/20 0.32
LMNA P02545 2/20 0.32
CA5A P35218 1/20 0.32
CA5B Q9Y2D0 1/20 0.32
KCNH2 Q12809 1/20 0.31
KDM4E B2RXH2 1/20 0.31
GLA P06280 1/20 0.31
MAPT P10636 1/20 0.31
KMT2A Q03164 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19816783 0.89 CA4 (0.42) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL19816700 0.83 LTA4H (0.38) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL429409 0.82 CA4 (0.43) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL706748 0.80 CA4 (0.42) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL8903228 0.79 CA4 (0.37) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL19816779 0.79 LTA4H (0.35) CA4LTA4HRIPK1
SCHEMBL2368966 0.78 PREP (0.45) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL2398717 0.78 LTA4H (0.41) CA4LTA4HTSHRRIPK1L3MBTL1
SCHEMBL28427115 0.78 RIPK1 (0.33) CA4RIPK1
SCHEMBL7699482 0.76 CA4 (0.39) CA4LTA4HTSHRMAPK1RIPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 299 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11059920-B2 Process for producing high cis-1,4-polydiene with lanthanide-based catalyst compositions BRIDGESTONE CORPORATION (JP) 2021-07-13 US claimed
US-20190169330-A1 Process For Producing High Cis-1,4-Polydiene With Lanthanide-Based Catalyst Compositions BRIDGESTONE CORPORATION (JP) 2019-06-06 US claimed
EP-3491030-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS Bridgestone Corporation (JP) 2019-06-05 EP claimed
WO-2018022994-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS BRIDGESTONE CORPORATION (JP) 2018-02-01 WO claimed
WO-2024190380-A1 SILICON-CONTAINING RESIN COMPOSITION PURIFIED PRODUCT MANUFACTURING METHOD, PATTERN FORMATION METHOD, AND SILICON-CONTAINING RESIN COMPOSITION PURIFIED PRODUCT 東京応化工業株式会社 2024-09-19 WO disclosed
US-20240262964-A1 METHOD OF PRODUCING SILICONE POLYMER TORAY FINE CHEMICALS CO., LTD. (JP) 2024-08-08 US disclosed
EP-4361201-A1 METHOD FOR PRODUCING SILICONE POLYMER Toray Fine Chemicals Co., Ltd. (JP) 2024-05-01 EP disclosed
US-20230167244-A1 METHOD OF PRODUCING SILICONE POLYMER TORAY FINE CHEMICALS CO., LTD. (JP) 2023-06-01 US disclosed
EP-4119596-A1 METHOD FOR PRODUCING SILICONE POLYMER Toray Fine Chemicals Co., Ltd. (JP) 2023-01-18 EP disclosed
WO-2022270336-A1 METHOD FOR PRODUCING SILICONE POLYMER 東レ・ファインケミカル株式会社 2022-12-29 WO disclosed
CN-115244109-A Method for producing siloxane polymer 东丽精细化工株式会社 2022-10-25 CN disclosed
CN-109715680-B Process for preparing high cis-1, 4-polydienes with lanthanide-based catalyst compositions 株式会社普利司通 2021-10-19 CN disclosed
US-20010009936-A1 Method of manufacturing material for forming insulating film JSR CORPORATION (JP) 2001-07-26 US disclosed
EP-1117102-A2 Method of manufacturing material for forming insulating film JSR Corporation (JP) 2001-07-18 EP disclosed
US-6235101-B1 SILICON HYDROLYZATE, METAL CHELATE, ORGANIC SOLVENT AND BETA DIKETONE FOR FILMS JSR CORPORATION (JP) 2001-05-22 US disclosed
EP-1090967-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-11 EP disclosed
EP-1088868-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-04 EP disclosed
EP-1058274-A1 Composition for film formation and material for insulating film formation JSR Corporation (JP) 2000-12-06 EP disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed
EP-0921561-A2 Composition for film formation and film JSR Corporation (JP) 1999-06-09 EP disclosed