SCHEMBL706839

SCHEMBL706839

CCC(O[SiH2]C[SiH2]OC(CC)(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 4/20 0.38
MAPK1 P28482 1/20 0.37
LMNA P02545 1/20 0.36
TAAR1 Q96RJ0 1/20 0.34
ALDH1A1 P00352 1/20 0.34
ALOX15 P16050 1/20 0.34
CHRM2 P08172 1/20 0.32
CHRM1 P11229 1/20 0.32
CHRM3 P20309 1/20 0.32
KIF11 P52732 1/20 0.31
CYP2C19 P33261 1/20 0.31
HIF1A Q16665 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704048 0.92 KCNN4 (0.38) KCNN4MAPK1LMNATAAR1ALDH1A1
SCHEMBL4281342 0.90 KCNN4 (0.36) KCNN4MAPK1LMNATAAR1ALDH1A1
SCHEMBL707299 0.88 KCNN4 (0.35) KCNN4MAPK1LMNATAAR1ALDH1A1
SCHEMBL704100 0.88 KCNN4 (0.35) KCNN4MAPK1LMNATAAR1ALDH1A1
SCHEMBL4266012 0.88 LMNA (0.37) KCNN4MAPK1LMNATAAR1ALDH1A1
SCHEMBL706465 0.84 KCNN4 (0.35) KCNN4MAPK1LMNATAAR1ALDH1A1
SCHEMBL4281338 0.83 KCNN4 (0.38) KCNN4MAPK1LMNATAAR1ALDH1A1
SCHEMBL5024578 0.82 TAAR1 (0.38) KCNN4MAPK1LMNATAAR1ALDH1A1
SCHEMBL703768 0.80 KCNN4 (0.35) KCNN4MAPK1LMNATAAR1ALDH1A1
SCHEMBL7764290 0.78 KCNN4 (0.43) KCNN4MAPK1LMNATAAR1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed