SCHEMBL704100

SCHEMBL704100

CCC(O[SiH2]CCCC[SiH2]OC(CC)(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 3/20 0.35
MAPK1 P28482 1/20 0.34
LMNA P02545 1/20 0.34
TAAR1 Q96RJ0 1/20 0.32
ALDH1A1 P00352 1/20 0.32
ALOX15 P16050 1/20 0.32
KIF11 P52732 3/20 0.31
SIGMAR1 Q99720 1/20 0.31
CHRM2 P08172 1/20 0.30
CHRM1 P11229 1/20 0.30
CHRM3 P20309 1/20 0.30
KCNH2 Q12809 1/20 0.30
CYP3A4 P08684 1/20 0.30
CYP2D6 P10635 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707299 0.96 KCNN4 (0.35) KCNN4MAPK1LMNATAAR1ALDH1A1
SCHEMBL704048 0.92 KCNN4 (0.38) KCNN4MAPK1LMNATAAR1ALDH1A1
SCHEMBL4266012 0.89 LMNA (0.37) KCNN4MAPK1LMNATAAR1ALDH1A1
SCHEMBL706839 0.88 KCNN4 (0.38) KCNN4MAPK1LMNATAAR1ALDH1A1
SCHEMBL4281342 0.86 KCNN4 (0.36) KCNN4MAPK1LMNATAAR1ALDH1A1
SCHEMBL707444 0.85 LMNA (0.33) KCNN4MAPK1LMNAKIF11SIGMAR1
SCHEMBL4281338 0.84 KCNN4 (0.38) KCNN4MAPK1LMNATAAR1ALDH1A1
SCHEMBL706316 0.81 LMNA (0.33) KCNN4MAPK1LMNAKIF11SIGMAR1
SCHEMBL5024578 0.78 TAAR1 (0.38) KCNN4MAPK1LMNATAAR1ALDH1A1
SCHEMBL703255 0.78 MAPK1 (0.40) KCNN4MAPK1TAAR1ALDH1A1ALOX15

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed