SCHEMBL707176

SCHEMBL707176

CC[SiH](Oc1ccccc1)c1ccccc1

nearest known ligand 0.38

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
KCNH2 Q12809 1/20 0.38
LTA4H P09960 5/20 0.38
CA4 P22748 1/20 0.37
TSHR P16473 1/20 0.35
KCNA3 P22001 1/20 0.34
CHRNB2 P17787 2/20 0.34
CHRNB4 P30926 2/20 0.34
CHRNA3 P32297 2/20 0.34
CHRNA7 P36544 2/20 0.34
CHRNA4 P43681 2/20 0.34
L3MBTL1 Q9Y468 1/20 0.33
DRD2 P14416 1/20 0.32
DRD4 P21917 1/20 0.32
DRD3 P35462 1/20 0.32
LMNA P02545 1/20 0.32
HTR1D P28221 1/20 0.32
HTR1B P28222 1/20 0.32
TP53 P04637 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705395 0.80 LTA4H (0.43) KCNH2LTA4HCA4KCNA3DRD2
SCHEMBL3680214 0.79 TP53 (0.36) KCNH2LTA4HCA4LMNATP53
SCHEMBL6268335 0.77 CA4 (0.35) KCNH2LTA4HCA4TP53
SCHEMBL20006696 0.76 LTA4H (0.34) KCNH2LTA4HTP53
SCHEMBL630589 0.76 TP53 (0.33) KCNH2LTA4HTP53
SCHEMBL705286 0.76 LTA4H (0.34) KCNH2LTA4HTSHRL3MBTL1TP53
SCHEMBL28642809 0.75 KCNA3 (0.47) KCNH2LTA4HKCNA3CHRNB2CHRNB4
SCHEMBL705470 0.75 CA4 (0.42) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL2981675 0.75 CA4 (0.42) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL19926975 0.74 TP53 (0.32) KCNH2TP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3507104-B1 PRODUCTION OF CIS-1,4-POLYDIENES WITH MULTIPLE SILANE FUNCTIONAL GROUPS PREPARED BYIN-SITU BRIDGESTONE CORP (JP) 2024-03-27 EP disclosed
CN-109641482-B Preparation of cis-1, 4-polydienes having multiple silane functional groups prepared by in situ hydrosilylation of polymer glues 株式会社普利司通 2021-11-05 CN disclosed
CN-109715680-B Process for preparing high cis-1, 4-polydienes with lanthanide-based catalyst compositions 株式会社普利司通 2021-10-19 CN disclosed
US-10975178-B2 Production of cis-1,4-polydienes with multiple silane functional groups prepared by in-situ hydrosilylation of polymer cement BRIDGESTONE CORPORATION (JP) 2021-04-13 US disclosed
US-20190211120-A1 Production Of Cis-1,4-Polydienes With Multiple Silane Functional Groups Prepared By In-Situ Hydrosilylation Of Polymer Cement BRIDGESTONE CORPORATION (JP) 2019-07-11 US disclosed
EP-3507104-A1 PRODUCTION OF CIS-1,4-POLYDIENES WITH MULTIPLE SILANE FUNCTIONAL GROUPS PREPARED BYIN-SITU Bridgestone Corporation (JP) 2019-07-10 EP disclosed
WO-2018045291-A1 PRODUCTION OF CIS-1,4-POLYDIENES WITH MULTIPLE SILANE FUNCTIONAL GROUPS PREPARED BY IN-SITU HYDROSILYLATION OF POLYMER CEMENT BRIDGESTONE CORPORATION (JP) 2018-03-08 WO disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed