SCHEMBL705286

SCHEMBL705286

CCO[SiH](CC)c1ccccc1

nearest known ligand 0.34

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 1/20 0.34
TP53 P04637 1/20 0.33
KCNH2 Q12809 2/20 0.31
RELA Q04206 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31
L3MBTL1 Q9Y468 2/20 0.31
GLA P06280 1/20 0.31
ALDH1A1 P00352 2/20 0.30
TSHR P16473 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23701265 0.83 LTA4H (0.32) LTA4HTP53
SCHEMBL27561723 0.83 ALDH1A1 (0.32) LTA4HTP53ALDH1A1
SCHEMBL708782 0.83 TP53 (0.36) LTA4HTP53
SCHEMBL707357 0.83 LMNA (0.37) LTA4HTP53ALDH1A1
SCHEMBL3680214 0.81 TP53 (0.36) LTA4HTP53KCNH2ALDH1A1
SCHEMBL3295856 0.79 CA2 (0.38) ALDH1A1TSHR
SCHEMBL702728 0.79 LTA4H (0.44) LTA4HTP53L3MBTL1ALDH1A1TSHR
SCHEMBL27622860 0.79 L3MBTL1 (0.31) LTA4HL3MBTL1ALDH1A1TSHR
SCHEMBL706041 0.79 LTA4H (0.36) LTA4HTP53NPSR1ALDH1A1
SCHEMBL6268335 0.79 CA4 (0.35) LTA4HTP53KCNH2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3507104-B1 PRODUCTION OF CIS-1,4-POLYDIENES WITH MULTIPLE SILANE FUNCTIONAL GROUPS PREPARED BYIN-SITU BRIDGESTONE CORP (JP) 2024-03-27 EP disclosed
CN-109641482-B Preparation of cis-1, 4-polydienes having multiple silane functional groups prepared by in situ hydrosilylation of polymer glues 株式会社普利司通 2021-11-05 CN disclosed
US-10975178-B2 Production of cis-1,4-polydienes with multiple silane functional groups prepared by in-situ hydrosilylation of polymer cement BRIDGESTONE CORPORATION (JP) 2021-04-13 US disclosed
US-20190211120-A1 Production Of Cis-1,4-Polydienes With Multiple Silane Functional Groups Prepared By In-Situ Hydrosilylation Of Polymer Cement BRIDGESTONE CORPORATION (JP) 2019-07-11 US disclosed
EP-3507104-A1 PRODUCTION OF CIS-1,4-POLYDIENES WITH MULTIPLE SILANE FUNCTIONAL GROUPS PREPARED BYIN-SITU Bridgestone Corporation (JP) 2019-07-10 EP disclosed
CN-109641482-A The preparation of the cis- -1,4- polydiene of multiple silane functionals with the Si―H addition reaction in situ preparation by polymer glue 株式会社普利司通 2019-04-16 CN disclosed
WO-2018045291-A1 PRODUCTION OF CIS-1,4-POLYDIENES WITH MULTIPLE SILANE FUNCTIONAL GROUPS PREPARED BY IN-SITU HYDROSILYLATION OF POLYMER CEMENT BRIDGESTONE CORPORATION (JP) 2018-03-08 WO disclosed
US-9051352-B2 Method for manufacturing a gold core/insulator shell nanostructure using a novel peptide GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 2015-06-09 US disclosed
US-8871890-B2 Curable resin composition and cured article DAICEL CORPORATION (JP) 2014-10-28 US disclosed
US-20130243959-A1 METHOD FOR MANUFACTURING A GOLD CORE/INSULATOR SHELL NANOSTRUCTURE USING A NOVEL PEPTIDE GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 2013-09-19 US disclosed
EP-2636706-A1 CURABLE RESIN COMPOSITION AND CURED ARTICLE Daicel Corporation (JP) 2013-09-11 EP disclosed
US-20130131265-A1 CURABLE RESIN COMPOSITION AND CURED ARTICLE DAICEL CORPORATION (JP) 2013-05-23 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed