SCHEMBL704165

SCHEMBL704165

c1ccc(O[Si](C[Si](Oc2ccccc2)(Oc2ccccc2)c2ccccc2)(Oc2ccccc2)c2ccccc2)cc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 3/20 0.38
TSHR P16473 1/20 0.38
KCNA3 P22001 1/20 0.37
CA4 P22748 1/20 0.35
KCNH2 Q12809 1/20 0.34
ALDH1A1 P00352 2/20 0.33
TAAR1 Q96RJ0 1/20 0.33
RECQL P46063 1/20 0.33
BCAT2 O15382 1/20 0.32
HAO1 Q9UJM8 1/20 0.32
ALOX15 P16050 1/20 0.32
LOXL2 Q9Y4K0 2/20 0.32
NPC1 O15118 1/20 0.31
RAB9A P51151 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
HTT P42858 1/20 0.31
CA5A P35218 1/20 0.31
CA5B Q9Y2D0 1/20 0.31
HRH3 Q9Y5N1 1/20 0.31
LOX P28300 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705116 0.86 LTA4H (0.38) LTA4HTSHRKCNA3CA4KCNH2
SCHEMBL704611 0.82 LTA4H (0.38) LTA4HTSHRKCNA3CA4KCNH2
SCHEMBL702283 0.82 KCNA3 (0.39) LTA4HTSHRKCNA3CA4KCNH2
SCHEMBL707307 0.82 KCNA3 (0.39) LTA4HTSHRKCNA3CA4KCNH2
SCHEMBL704669 0.79 LTA4H (0.37) LTA4HTSHRKCNA3CA4KCNH2
SCHEMBL707077 0.78 KCNA3 (0.44) LTA4HTSHRKCNA3CA4KCNH2
SCHEMBL703808 0.77 LTA4H (0.38) LTA4HTSHRKCNA3CA4KCNH2
SCHEMBL545113 0.77 SMN1; SMN2 (0.32) LTA4HTSHRKCNA3RAB9ASMN1; SMN2
SCHEMBL19817027 0.77 CA4 (0.38) LTA4HTSHRKCNA3CA4
SCHEMBL19816734 0.76 LTA4H (0.37) LTA4HTSHRKCNA3CA4ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed