SCHEMBL707567

SCHEMBL707567

CCCC[Si](CCCC)(CCC[Si](CCCC)(CCCC)OC)OC

nearest known ligand 0.35

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.35
TSHR P16473 2/20 0.33
THRB P10828 1/20 0.32
EPHX1 P07099 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL537511 0.97 LMNA (0.37) LMNATSHRTHRBEPHX1
SCHEMBL703661 0.94 LMNA (0.35) LMNATSHRTHRBEPHX1
SCHEMBL703497 0.94 LMNA (0.35) LMNATSHRTHRBEPHX1
SCHEMBL16497600 0.92 LMNA (0.39) LMNATSHRTHRBEPHX1
SCHEMBL3481732 0.92 LMNA (0.34) LMNATSHRTHRB
SCHEMBL3481472 0.92 LMNA (0.34) LMNATSHRTHRB
SCHEMBL707241 0.88 LMNA (0.31) LMNA
SCHEMBL613246 0.88 LMNA (0.40) LMNATSHRTHRBEPHX1
SCHEMBL19356773 0.86 TSHR (0.44) LMNATSHRTHRBEPHX1
SCHEMBL612829 0.86 TSHR (0.44) LMNATSHRTHRBEPHX1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed