SCHEMBL3481732

SCHEMBL3481732

CCCC[Si](CCC)(CCC)OC

nearest known ligand 0.34

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.34
TSHR P16473 2/20 0.32
THRB P10828 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481472 1.00 LMNA (0.34) LMNATSHRTHRB
SCHEMBL537511 0.94 LMNA (0.37) LMNATSHRTHRB
SCHEMBL14265450 0.92 LMNA (0.38) LMNATSHRTHRB
SCHEMBL707241 0.92 LMNA (0.31) LMNA
SCHEMBL713105 0.92 LMNA (0.31) LMNA
SCHEMBL707567 0.92 LMNA (0.35) LMNATSHRTHRB
SCHEMBL703497 0.92 LMNA (0.35) LMNATSHRTHRB
SCHEMBL703661 0.92 LMNA (0.35) LMNATSHRTHRB
SCHEMBL3481526 0.90 LMNA (0.32) LMNA
SCHEMBL14265447 0.90 LMNA (0.41) LMNATSHRTHRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
CN-101641767-B Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device FUJITSU LTD 2013-10-30 CN disclosed
CN-102308020-A Insulating film material, and film formation method utilizing the material, and insulating film NAT INST FOR MATERIAL SCIENCE 2012-01-04 CN disclosed
US-20110313184-A1 INSULATING FILM MATERIAL, AND FILM FORMATION METHOD UTILIZING THE MATERIAL, AND INSULATING FILM TAIYO NIPPON SANSO CORPORATION (JP) 2011-12-22 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
CN-101196700-A Hydrophobic metallic oxide powder, producing method and toner composition for electrophotograph EVONIK DEGUSSA GMBH (DE) 2008-06-11 CN disclosed
US-7344235-B2 Ink composition for ink jet recording, ink cartridge, nozzle plate for ink jet recording, ink jet head, and recording apparatus MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2008-03-18 US disclosed
US-7169327-B2 Composite particle for dielectrics, ultramicroparticulate composite resin particle, composition for forming dielectrics and use thereof JSR CORPORATION (JP) 2007-01-30 US disclosed
US-6548582-B2 Inorganic particles, binder resin and at least one plasticizer selected from dialk(en)yl ester of alkanedioic acids, or alkoxyalkylylated esters therof, or 1,2-propanediol 1-alkanoates; flexibility JSR CORPORATION (JP) 2003-04-15 US disclosed
EP-0877003-B1 Glass paste composition JSR CORP (JP) 2002-09-18 EP disclosed
US-20020035183-A1 Inorgaic particle-containing composition, transfer film comprising the same and plasma display panel production process JSR CORPORATION (JP) 2002-03-21 US disclosed
US-20020016401-A1 Inorganic particle-containing composition, transfer film comprising the same and plasma display panel production process JSR CORPORATION (JP) 2002-02-07 US disclosed
US-6339118-B1 FOR FORMING BARRIER, ELECTRODE, RESISTOR, DIELECTRIC LAYER, PHOSPHOR, COLOR FILTER OR BLACK MATRIX OF PLASMA DISPLAY PANEL JSR CORPORATION (JP) 2002-01-15 US disclosed
EP-1003199-A2 Inorganic particle-containing composition, transfer film comprising the same and plasma display panel production process JSR Corporation (JP) 2000-05-24 EP disclosed
US-6046121-A MIXTURE COMPRISING GLASS POWDER, HYDROPHILIC ACRYLATE POLYMER BINDER RESIN IN A NONAQUEOUS SOLVENT HAVING BOILING POINT BETWEEN 100 AND 200 DEGREES C., AND A LOW VAPOR PRESSURE JSR CORPORATION (JP) 2000-04-04 US disclosed
EP-0987228-A2 Glass paste composition, and transfer film and plasma display panel comprising the same JSR Corporation (JP) 2000-03-22 EP disclosed
CN-1226945-A Treating agent for polyurethane elastic fiber and polyurethane elastic fiber treated with the same TAKEMOTO OIL & FAT CO LTD (JP) 1999-08-25 CN disclosed
EP-0877003-A2 Glass paste composition JSR Corporation (JP) 1998-11-11 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110313184-A1 INSULATING FILM MATERIAL, AND FILM FORMATION METHOD UTILIZING THE MATERIAL, AND INSULATING FILM APOB, HMGCR, SREBF1 LMNA 158/4885TSHR 4632/4885THRB 3617/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.