SCHEMBL707593

SCHEMBL707593

CCCCO[SiH](c1ccccc1)C(C)(C)C

nearest known ligand 0.42

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.42
CYP1A2 P05177 2/20 0.37
CYP2C9 P11712 2/20 0.37
CYP2C19 P33261 2/20 0.37
TSHR P16473 4/20 0.36
L3MBTL1 Q9Y468 3/20 0.36
TDP1 Q9NUW8 2/20 0.36
ALDH1A1 P00352 4/20 0.33
TP53 P04637 1/20 0.33
CYP3A4 P08684 1/20 0.33
MAPK1 P28482 1/20 0.33
LMNA P02545 1/20 0.33
NPY1R P25929 1/20 0.33
NPY2R P49146 1/20 0.33
HPGD P15428 1/20 0.33
CYP2D6 P10635 1/20 0.33
CYP19A1 P11511 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705121 0.89 MEN1 (0.35) LTA4HTSHRALDH1A1MAPK1LMNA
SCHEMBL713132 0.81 RELA (0.33) LTA4HTSHRALDH1A1TP53MAPK1
SCHEMBL27538454 0.79 CA1 (0.37) TDP1ALDH1A1HPGD
SCHEMBL864473 0.77 LTA4H (0.47) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL2769933 0.77 LTA4H (0.47) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL16136456 0.77 IDO1 (0.37) TSHRL3MBTL1TDP1ALDH1A1LMNA
SCHEMBL703008 0.76 LTA4H (0.46) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL702728 0.74 LTA4H (0.44) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL706087 0.73 LTA4H (0.43) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL28994570 0.73 LTA4H (0.43) LTA4HCYP1A2CYP2C9CYP2C19TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed