Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | DNM1 | Q05193 | 7/20 | 0.35 |
| ▸ | TSHR | P16473 | 3/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.33 |
| ▸ | THRB | P10828 | 1/20 | 0.31 |
| ▸ | MEN1 | O00255 | 1/20 | 0.30 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.30 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL711779 | 0.92 | DNM1 (0.35) | DNM1TSHRLMNATHRBMEN1 | |
| SCHEMBL1419413 | 0.89 | — | — | |
| SCHEMBL6275392 | 0.89 | DNM1 (0.40) | DNM1TSHRLMNATHRBMEN1 | |
| Hydrochloric Acid SCHEMBL5702798 | 0.88 | — | — | |
| Hydrochloric Acid SCHEMBL5702793 | 0.88 | LMNA (0.31) | TSHRLMNA | |
| SCHEMBL207046 | 0.88 | — | — | |
| Bromide SCHEMBL9244828 | 0.86 | DNM1 (0.38) | DNM1TSHRLMNATHRBMEN1 | |
| SCHEMBL3399520 | 0.86 | — | — | |
| SCHEMBL4109559 | 0.86 | — | — | |
| SCHEMBL704535 | 0.85 | TSHR (0.43) | DNM1TSHRLMNATHRBMEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| US-5744196-A | Low temperature deposition of silicon dioxide using organosilanes | AIR PRODUCTS AND CHEMICALS, INC. (US) | 1998-04-28 | — | — | US | disclosed |
| EP-0721019-A2 | Low temperature deposition of silicon dioxide using organosilanes | AIR PRODUCTS AND CHEMICALS, INC. (US) | 1996-07-10 | — | — | EP | disclosed |