SCHEMBL711779

SCHEMBL711779

CCC[SiH2]CCCC[SiH2]CCC

nearest known ligand 0.35

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 7/20 0.35
TSHR P16473 3/20 0.33
LMNA P02545 1/20 0.33
THRB P10828 1/20 0.31
MEN1 O00255 1/20 0.30
KMT2A Q03164 1/20 0.30
ALDH1A1 P00352 1/20 0.30
EPHX1 P07099 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6275392 0.96 DNM1 (0.40) DNM1TSHRLMNATHRBMEN1
SCHEMBL3399520 0.93
SCHEMBL707732 0.92 DNM1 (0.35) DNM1TSHRLMNATHRBMEN1
SCHEMBL12504082 0.90 DNM1 (0.50) DNM1TSHRLMNATHRBMEN1
SCHEMBL3395855 0.90 DNM1 (0.50) DNM1TSHRLMNATHRBMEN1
SCHEMBL29268447 0.90 DNM1 (0.50) DNM1TSHRLMNATHRBMEN1
SCHEMBL12504443 0.90 DNM1 (0.50) DNM1TSHRLMNATHRBMEN1
SCHEMBL1419413 0.89
Hydrochloric Acid SCHEMBL5702793 0.88 LMNA (0.31) TSHRLMNA
Hydrochloric Acid SCHEMBL5702798 0.88

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed