SCHEMBL707974

SCHEMBL707974

CCO[Si](C)(OCC)c1ccc([Si](C)(OCC)OCC)cc1

nearest known ligand 0.33

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
NQO1 P15559 1/20 0.33
ESR1 P03372 2/20 0.32
AR P10275 1/20 0.31
ESR2 Q92731 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25168728 0.93 ESR1 (0.33) ESR1ARESR2
SCHEMBL12458718 0.91
SCHEMBL3482055 0.91 ACHE (0.36) ESR1ARESR2
SCHEMBL12458732 0.91
SCHEMBL31310252 0.89
SCHEMBL4448002 0.89 TDP1 (0.45)
SCHEMBL15734189 0.89 TDP1 (0.35)
SCHEMBL3482149 0.89 TP53 (0.37)
SCHEMBL2616652 0.89
SCHEMBL28062850 0.89 CYP2A6 (0.35)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 65 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9817312-B2 Silicon-containing heat- or photo-curable composition AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.À R.L. (LU) 2017-11-14 US claimed
US-20160266490-A1 SILICON-CONTAINING HEAT- OR PHOTO-CURABLE COMPOSITION AZ ELECTRONIC MATERIALS S.À R.L. (LU) 2016-09-15 US claimed
EP-4683005-A1 ELECTRODE CATALYST CONTAINING POROUS SILICON CARBIDE COMPOSITE MATERIAL, ELECTRODE FOR ELECTRODE CATALYST, FUEL CELL, AND MANUFACTURING METHOD OF ELECTRODE CATALYST DIC Corporation (JP) 2026-01-21 EP disclosed
EP-4683006-A1 POROUS SILICON CARBIDE COMPOSITE MATERIAL, ELECTRODE FOR FUEL CELL, AND METHOD FOR MANUFACTURING POROUS SILICON CARBIDE COMPOSITE MATERIAL DIC Corporation (JP) 2026-01-21 EP disclosed
US-12473405-B2 Polyorganosiloxane, polyorganosiloxane composition, cured product, polyorganosiloxane-containing electrolytic solution for electrolytic capacitor, and electrolytic capacitor using same MITSUBISHI CHEMICAL CORPORATION (JP) 2025-11-18 US disclosed
US-20250239627-A1 ELECTRODE CATALYST CONTAINING POROUS SILICON OXYCARBIDE COMPOSITE MATERIAL, ELECTRODE, FUEL CELL, AND METHOD FOR PRODUCING ELECTRODE CATALYST CONTAINING POROUS SILICON OXYCARBIDE COMPOSITE MATERIAL DIC CORPORATION (JP) 2025-07-24 US disclosed
WO-2025126962-A1 PLATINUM CATALYST CONTAINING POROUS SILICON CARBIDE COMPOSITE MATERIAL, CATALYTIC ELECTRODE, FUEL CELL, AND METHOD FOR PRODUCING SAID PLATINUM CATALYST DIC株式会社 2025-06-19 WO disclosed
WO-2025105207-A1 SURGICAL ELECTRODE HAVING SURFACE TREATMENT COATING 日本パーカライジング株式会社 2025-05-22 WO disclosed
WO-2025053279-A1 ORGANOPOLYSILOXANE, ORGANOPOLYSILOXANE-CONTAINING RESIN COMPOSITION, CURED PRODUCT THEREOF, ORGANOPOLYSILOXANE FOR NEAR-INFRARED OPTICAL WAVEGUIDE, ORGANOPOLYSILOXANE-CONTAINING RESIN COMPOSITION FOR NEAR-INFRARED OPTICAL WAVEGUIDE, CURED PRODUCT FOR NEAR-INFRARED OPTICAL WAVEGUIDE, NEAR-INFRARED OPTICAL WAVEGUIDE, NEAR-INFRARED OPTICAL TRANSMISSION MEMBER, AND NEAR-INFRARED OPTICAL WAVEGUIDE PRODUCTION METHOD 三菱ケミカル株式会社 2025-03-13 WO disclosed
WO-2025053278-A1 ORGANOPOLYSILOXANE, ORGANOPOLYSILOXANE COMPOSITION, CURED PRODUCT THEREOF, ORGANOPOLYSILOXANE FOR NEAR-INFRARED OPTICAL WAVEGUIDE, ORGANOPOLYSILOXANE COMPOSITION FOR NEAR-INFRARED OPTICAL WAVEGUIDE, CURED PRODUCT FOR NEAR-INFRARED OPTICAL WAVEGUIDE, NEAR-INFRARED OPTICAL WAVEGUIDE, NEAR-INFRARED OPTICAL TRANSMISSION MEMBER, AND NEAR-INFRARED OPTICAL WAVEGUIDE PRODUCTION METHOD 三菱ケミカル株式会社 2025-03-13 WO disclosed
WO-2025053280-A1 OPTICAL WAVEGUIDE AND OPTICAL MEMBER HAVING OPTICAL WAVEGUIDE 三菱ケミカル株式会社 2025-03-13 WO disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed
US-20040202956-A1 a photocurable mixture of a hydrolyzable metal (silyl) compound and a reaction, polymerization or crosslinking promoter; curing; adhesives, seals, semiconductors, dielectrics, microlenses, optical fibers, color filters, gas permeable films SEKISUI CHEMICAL CO., LTD. (JP) 2004-10-14 US disclosed
CN-1536023-A Porous membrane shaping composition, preparation method of porous membrane, porous membrane intercalation insulating film and semiconductor device ��Խ��ѧ��ҵ��ʽ���� 2004-10-13 CN disclosed
EP-1391476-A1 PHOTOREACTIVE COMPOSITION SEKISUI CHEMICAL CO., LTD. (JP) 2004-02-25 EP disclosed
EP-1334993-A2 Proton conducting membrane, method for producing the same, and fuel cell using the same National Institute of Advanced Industrial Science and Technology (JP) 2003-08-13 EP disclosed
US-5229481-A High-molecular weight, silicon-containing polymers and methods for the preparation and use thereof THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 1993-07-20 US disclosed