SCHEMBL3482055

SCHEMBL3482055

CCO[Si](C)(OCC)c1ccc(C)cc1

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ACHE P22303 2/20 0.36
TDP1 Q9NUW8 1/20 0.36
SMN1; SMN2 Q16637 4/20 0.34
NPC1 O15118 3/20 0.34
RAB9A P51151 3/20 0.34
TSHR P16473 1/20 0.34
TARBP2 Q15633 1/20 0.33
ENPP3 O14638 1/20 0.33
ENPP1 P22413 1/20 0.33
AGXT P21549 2/20 0.32
ESR1 P03372 1/20 0.31
AR P10275 1/20 0.31
ESR2 Q92731 1/20 0.31
MEN1 O00255 3/20 0.31
KMT2A Q03164 3/20 0.31
LMNA P02545 1/20 0.31
HTT P42858 3/20 0.31
CYP1A2 P05177 2/20 0.31
CYP2C19 P33261 2/20 0.31
IDO1 P14902 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707974 0.91 NQO1 (0.33) ESR1ARESR2
SCHEMBL6856508 0.90 TSHR (0.35) SMN1; SMN2NPC1RAB9ATSHRMEN1
SCHEMBL6841147 0.90 TSHR (0.35) SMN1; SMN2NPC1RAB9ATSHRMEN1
SCHEMBL6852204 0.86 ENPP3 (0.35) SMN1; SMN2NPC1RAB9ATSHRTARBP2
SCHEMBL6843073 0.84 CYP2C19 (0.39) TDP1SMN1; SMN2NPC1RAB9ATSHR
SCHEMBL6848590 0.84 CYP2C19 (0.39) TDP1SMN1; SMN2NPC1RAB9ATSHR
SCHEMBL6852172 0.84 CYP2C19 (0.39) TDP1SMN1; SMN2NPC1RAB9ATSHR
SCHEMBL6846645 0.84 CYP2C19 (0.39) TDP1SMN1; SMN2NPC1RAB9ATSHR
SCHEMBL25168728 0.84 ESR1 (0.33) SMN1; SMN2NPC1RAB9AENPP3ENPP1
SCHEMBL3482147 0.83 ACHE (0.33) ACHETDP1AGXTESR1AR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230302533-A1 Additive Manufacturing Powder And Additively Manufactured Body SEIKO EPSON CORPORATION (JP) 2023-09-28 US disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
CN-101641767-B Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device FUJITSU LTD 2013-10-30 CN disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-20080118834-A1 Core of an active material being capable of performing reversible electrochemical oxidation and reduction; a coating layer on the surface of the core with a reticular structure and a metal oxide with side chains of alkyl group, a haloalkyl group, a substituted or unsubstituted aryl group SAMSUNG SDI CO., LTD. A CORPORATION CHARTERED IN AND EXISTING UNDER THE LAWS OF THE REPUBLIC OF KOREA (KR) 2008-05-22 US disclosed