SCHEMBL707984

SCHEMBL707984

CCO[Si](CCCC[Si](OCC)(OCC)c1ccccc1)(OCC)c1ccccc1

nearest known ligand 0.32

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.32
TP53 P04637 1/20 0.31
MAPT P10636 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL647736 0.96 TSHR (0.33) LTA4HTP53MAPT
SCHEMBL19470825 0.94 LTA4H (0.37) LTA4H
SCHEMBL19470865 0.93 KCNH2 (0.39) LTA4HTP53
SCHEMBL19470880 0.93 KCNH2 (0.39) LTA4HTP53
SCHEMBL28164442 0.93 KCNH2 (0.39) LTA4HTP53
SCHEMBL20483789 0.93 KCNH2 (0.39) LTA4HTP53
SCHEMBL19470850 0.93 KCNH2 (0.39) LTA4HTP53
SCHEMBL19470829 0.93 KCNH2 (0.39) LTA4HTP53
SCHEMBL703455 0.92 LTA4H (0.36) LTA4HMAPT
SCHEMBL645725 0.91 LTA4H (0.34) LTA4HTP53MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed