SCHEMBL647736

SCHEMBL647736

CCO[Si](CCC[Si](OCC)(OCC)c1ccccc1)(OCC)c1ccccc1

nearest known ligand 0.33

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.33
LTA4H P09960 2/20 0.32
TP53 P04637 1/20 0.31
MAPT P10636 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707984 0.96 LTA4H (0.32) LTA4HTP53MAPT
SCHEMBL703455 0.92 LTA4H (0.36) TSHRLTA4HMAPT
SCHEMBL645725 0.91 LTA4H (0.34) TSHRLTA4HTP53MAPT
SCHEMBL19470825 0.90 LTA4H (0.37) LTA4H
SCHEMBL19470880 0.89 KCNH2 (0.39) LTA4HTP53
SCHEMBL1069349 0.89 MAOA (0.34)
SCHEMBL319642 0.89 SMN1; SMN2 (0.34) LTA4H
SCHEMBL28537234 0.89 NR1H2 (0.32) LTA4HMAPT
SCHEMBL19470850 0.89 KCNH2 (0.39) LTA4HTP53
SCHEMBL20483789 0.89 KCNH2 (0.39) LTA4HTP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 116 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10474032-B2 Coating compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2019-11-12 US disclosed
US-9437431-B2 Electronic device manufacture ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-09-06 US disclosed
EP-1720075-B1 Coating compositions ROHM & HAAS ELECT MAT (US) 2016-03-02 EP disclosed
US-20150072290-A1 COATING COMPOSITIONS ROHM AND HAAS ELECTRONIC MATERIALS LLC 2015-03-12 US disclosed
US-8911927-B2 Compositions and processes for immersion lithography ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-12-16 US disclosed
US-8889344-B2 Coating compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-11-18 US disclosed
US-8450045-B2 Pattern forming method JSR CORPORATION (JP) 2013-05-28 US disclosed
US-8283260-B2 Process for restoring dielectric properties AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-10-09 US disclosed
US-8263316-B2 Electronic device manufacture ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2012-09-11 US disclosed
US-20120122036-A1 PATTERN FORMING METHOD JSR CORPORATION (JP) 2012-05-17 US disclosed
US-20030008155-A1 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR CORPORATION (JP) 2003-01-09 US disclosed
US-20030008244-A1 Porous optical materials SHIPLEY COMPANY, L.L.C. (US) 2003-01-09 US disclosed
EP-1267395-A2 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR Corporation (JP) 2002-12-18 EP disclosed
EP-1265080-A2 Porous optical materials Shipley Company LLC (US) 2002-12-11 EP disclosed
US-6376634-B1 ORGANOSILICON POLYMERS JSR CORPORATION (JP) 2002-04-23 US disclosed
US-20010018129-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2001-08-30 US disclosed
EP-1122770-A2 Silica-based insulating film and its manufacture JSR Corporation (JP) 2001-08-08 EP disclosed
US-20010009936-A1 Method of manufacturing material for forming insulating film JSR CORPORATION (JP) 2001-07-26 US disclosed
EP-1058274-A1 Composition for film formation and material for insulating film formation JSR Corporation (JP) 2000-12-06 EP disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed