SCHEMBL707991

SCHEMBL707991

c1ccc(OC(CC[SiH2]c2ccc([SiH2]CCC(Oc3ccccc3)Oc3ccccc3)cc2)Oc2ccccc2)cc1

nearest known ligand 0.35

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
SLC6A4 P31645 1/20 0.35
LMNA P02545 1/20 0.33
SCN4A P35499 2/20 0.32
PPARG P37231 4/20 0.32
PPARA Q07869 4/20 0.32
KCNA3 P22001 1/20 0.31
LTA4H P09960 1/20 0.31
TSHR P16473 1/20 0.31
MTNR1A P48039 1/20 0.31
MTNR1B P49286 1/20 0.31
MAOA P21397 1/20 0.31
PTGS1 P23219 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703809 0.80 SLC6A4 (0.37) SLC6A4LMNASCN4APPARGPPARA
SCHEMBL705985 0.80 SLC6A4 (0.37) SLC6A4LMNASCN4APPARGPPARA
SCHEMBL704154 0.78 SLC6A4 (0.36) SLC6A4LMNASCN4APPARGPPARA
SCHEMBL705261 0.77 KCNA3 (0.35) SLC6A4LMNASCN4APPARGPPARA
SCHEMBL702539 0.77 KCNA3 (0.35) SLC6A4LMNASCN4APPARGPPARA
SCHEMBL6463009 0.75 SLC6A4 (0.43) SLC6A4LMNAPPARGPPARALTA4H
SCHEMBL4370604 0.71 SLC6A4 (0.39) SLC6A4LMNASCN4APPARGPPARA
SCHEMBL6438883 0.71 ALDH1A1 (0.46) SLC6A4LMNAPPARGPPARAKCNA3
SCHEMBL28441426 0.71 SLC6A4 (0.39) SLC6A4LMNASCN4APPARGPPARA
SCHEMBL11658593 0.71 SLC6A4 (0.39) SLC6A4LMNASCN4APPARGPPARA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed