SCHEMBL705261

SCHEMBL705261

c1ccc(OC(CC[SiH2]CCCC[SiH2]CCC(Oc2ccccc2)Oc2ccccc2)Oc2ccccc2)cc1

nearest known ligand 0.35

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
KCNA3 P22001 1/20 0.35
SLC6A4 P31645 3/20 0.35
LMNA P02545 1/20 0.33
SCN4A P35499 2/20 0.32
TAAR1 Q96RJ0 1/20 0.32
SLC7A5 Q01650 7/20 0.32
PPARG P37231 1/20 0.32
PPARA Q07869 1/20 0.32
HTR2A P28223 1/20 0.31
HRH1 P35367 1/20 0.31
SLC6A2 P23975 2/20 0.31
SLC6A3 Q01959 2/20 0.31
KCNK2 O95069 1/20 0.31
KCNH2 Q12809 1/20 0.31
CACNA1C Q13936 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702539 0.96 KCNA3 (0.35) KCNA3SLC6A4LMNASCN4ATAAR1
SCHEMBL705985 0.92 SLC6A4 (0.37) KCNA3SLC6A4LMNASCN4ATAAR1
SCHEMBL704154 0.86 SLC6A4 (0.36) KCNA3SLC6A4LMNASCN4APPARG
SCHEMBL705626 0.82 KCNA3 (0.37) KCNA3SLC6A4LMNATAAR1SLC7A5
SCHEMBL706554 0.78 KCNA3 (0.37) KCNA3SLC6A4LMNATAAR1SLC7A5
SCHEMBL707991 0.77 SLC6A4 (0.35) KCNA3SLC6A4LMNASCN4APPARG
SCHEMBL30309249 0.76 HRH1 (0.52) SLC6A4TAAR1SLC7A5HTR2AHRH1
SCHEMBL6463009 0.75 SLC6A4 (0.43) SLC6A4LMNAPPARGPPARA
SCHEMBL702065 0.74 SLC6A4 (0.38) KCNA3SLC6A4LMNAPPARGPPARA
SCHEMBL25203010 0.72 KCNA3 (0.38) KCNA3SLC6A4LMNASCN4APPARG

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed