SCHEMBL708018

SCHEMBL708018

Cl[Si](Cl)(C[Si](Cl)(Cl)c1ccccc1)c1ccccc1

nearest known ligand 0.35

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.35
ESR1 P03372 1/20 0.32
ESR2 Q92731 1/20 0.32
CYP19A1 P11511 1/20 0.32
ALDH1A1 P00352 2/20 0.32
HSD17B10 Q99714 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
CALM1 P0DP23 1/20 0.32
IDO1 P14902 1/20 0.31
MEN1 O00255 1/20 0.30
HTT P42858 1/20 0.30
KMT2A Q03164 1/20 0.30
KDM4E B2RXH2 1/20 0.30
PKM P14618 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706034 0.82 TSHR (0.33) TSHRESR1ESR2CYP19A1ALDH1A1
SCHEMBL1262666 0.80 KMT2A (0.32) TSHRESR1ESR2CYP19A1ALDH1A1
SCHEMBL115193 0.78 TP53 (0.38) TSHRESR1ESR2CYP19A1ALDH1A1
SCHEMBL4079188 0.78 ALDH1A1 (0.38) TSHRESR1ESR2CYP19A1ALDH1A1
SCHEMBL705203 0.78 MAPT (0.31) TSHRESR1ESR2CYP19A1
SCHEMBL4076830 0.78 ALDH1A1 (0.36) TSHRESR1ESR2CYP19A1ALDH1A1
SCHEMBL703162 0.78 MAPT (0.31) TSHRESR1ESR2CYP19A1
SCHEMBL702666 0.77 TSHR (0.35) TSHRESR1ESR2CYP19A1ALDH1A1
SCHEMBL3225896 0.76
SCHEMBL11691875 0.76 ALDH1A1 (0.32) ALDH1A1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed