SCHEMBL7096984

SCHEMBL7096984

Cc1cc(CCl)c(O[SiH3])c(C)c1CCl

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6916600 0.76 PON1 (0.33)
SCHEMBL5079145 0.74 THRB (0.38)
SCHEMBL4632384 0.71 ALDH1A1 (0.33)
SCHEMBL2810221 0.70 PGK1 (0.44)
SCHEMBL6916944 0.67 PON1 (0.33)
SCHEMBL10751045 0.67 MEN1 (0.43)
SCHEMBL5872351 0.66 PGK1 (0.37)
SCHEMBL5598488 0.65 PON1 (0.36)
SCHEMBL442987 0.65 ALDH1A1 (0.42)
SCHEMBL10751600 0.64 MAPT (0.37)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6656855-B2 Deposition method of dielectric films having a low dielectric constant STMICROELECTRONICS S.R.L. (IT) 2003-12-02 US disclosed
US-20030171004-A1 Deposition method of dielecrtric films having a low dielectric constant STMICROELECTRONICS S.R.I. 2003-09-11 US disclosed
US-6551949-B2 Vapor deposition; overcoating semiconductor substrate STMICROELECTRONICS S.R.L. (IT) 2003-04-22 US disclosed
US-20020004139-A1 Deposition method of dielectric films having a low dielectric constant STMICROELECTRONICS S.R.L. (IT) 2002-01-10 US disclosed
EP-1149933-A1 Deposition method of dielectric films having a low dielectric constant STMicroelectronics S.r.l. (IT) 2001-10-31 EP disclosed