Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPT | P10636 | 3/20 | 0.44 |
| ▸ | HTT | P42858 | 2/20 | 0.44 |
| ▸ | TP53 | P04637 | 1/20 | 0.44 |
| ▸ | STAT3 | P40763 | 1/20 | 0.44 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.44 |
| ▸ | DNMT1 | P26358 | 1/20 | 0.43 |
| ▸ | NSD2 | O96028 | 4/20 | 0.36 |
| ▸ | TDP2 | O95551 | 3/20 | 0.36 |
| ▸ | APAF1 | O14727 | 2/20 | 0.36 |
| ▸ | HKDC1 | Q2TB90 | 2/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.34 |
| ▸ | ATG4B | Q9Y4P1 | 2/20 | 0.34 |
| ▸ | LMNA | P02545 | 2/20 | 0.34 |
| ▸ | MEN1 | O00255 | 1/20 | 0.34 |
| ▸ | NPC1 | O15118 | 1/20 | 0.34 |
| ▸ | RAB9A | P51151 | 1/20 | 0.34 |
| ▸ | GALK1 | P51570 | 1/20 | 0.34 |
| ▸ | BLM | P54132 | 1/20 | 0.34 |
| ▸ | ATM | Q13315 | 1/20 | 0.34 |
| ▸ | NOD2 | Q9HC29 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Triaziquone SCHEMBL8974524 | 0.92 | MAPT (0.42) | MAPTHTTTP53STAT3SMN1; SMN2 | |
| Triaziquone SCHEMBL9794506 | 0.92 | MAPT (0.42) | MAPTHTTTP53STAT3SMN1; SMN2 | |
| Triaziquone SCHEMBL10440466 | 0.92 | MAPT (0.42) | MAPTHTTTP53STAT3SMN1; SMN2 | |
| Triaziquone SCHEMBL8303 | 0.92 | DNMT1 (0.48) | MAPTHTTTP53STAT3SMN1; SMN2 | |
| Triaziquone SCHEMBL1546343 | 0.91 | MAPT (0.41) | MAPTHTTTP53STAT3SMN1; SMN2 | |
| Triaziquone SCHEMBL149876 | 0.90 | MAPT (0.46) | MAPTHTTTP53STAT3SMN1; SMN2 | |
| Triaziquone SCHEMBL7783197 | 0.90 | MAPT (0.46) | MAPTHTTTP53STAT3SMN1; SMN2 | |
| Triaziquone SCHEMBL8993238 | 0.90 | DNMT1 (0.47) | MAPTHTTTP53STAT3SMN1; SMN2 | |
| Triaziquone SCHEMBL8482641 | 0.90 | DNMT1 (0.47) | MAPTHTTTP53STAT3SMN1; SMN2 | |
| Triaziquone SCHEMBL6000230 | 0.90 | DNMT1 (0.47) | MAPTHTTTP53STAT3SMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-117023630-A | Preparation method of gallium oxide nano-sheet and electrode sheet | 东莞意可新材料有限公司 | 2023-11-10 | — | — | CN | claimed |
| EP-2297379-B1 | METHODS OF PRODUCING HIGH-K DIELECTRIC FILMS USING CERIUM-BASED ß-DIKETONATE PRECURSORS | SIGMA ALDRICH CO LLC (US) | 2019-04-17 | — | — | EP | claimed |
| US-20020115886-A1 | Tantalum tertiary amylimido tris (dimethylamide), a process for producing the same, a solution of starting material for MOCVD using the same, and a method of forming a tantalum nitride film using the same | KABUSHIKIKAISHA KOJUNDOKOKAGAKU KENKYUSHO (JP) | 2002-08-22 | — | — | US | claimed |
| CN-1205557-A | Process for producing thin films of oxide ceramic | SIEMENS AG (DE) | 1999-01-20 | — | — | CN | claimed |
| CN-117023630-A | Preparation method of gallium oxide nano-sheet and electrode sheet | 东莞意可新材料有限公司 | 2023-11-10 | — | — | CN | disclosed |
| CN-117023630-A | Preparation method of gallium oxide nano-sheet and electrode sheet | 东莞意可新材料有限公司 | 2023-11-10 | — | — | CN | disclosed |
| CN-115735266-A | Titanium complex, method for producing same, and method for producing titanium-containing thin film | 东曹株式会社 | 2023-03-03 | — | — | CN | disclosed |
| CN-114381711-A | Method of forming a structure for threshold voltage control | ASM IP私人控股有限公司 | 2022-04-22 | — | — | CN | disclosed |
| CN-111933668-A | Semiconductor device with a plurality of semiconductor chips | 株式会社半导体能源研究所 | 2020-11-13 | — | — | CN | disclosed |
| CN-105849875-B | Semiconductor device and method for manufacturing the same | 株式会社半导体能源研究所 | 2020-03-06 | — | — | CN | disclosed |
| EP-0966553-B1 | PROCESS FOR LOW TEMPERATURE CVD USING BI-AMIDES | INFINEON TECHNOLOGIES AG (DE) | 2004-03-24 | — | — | EP | disclosed |
| US-6593484-B2 | Forming tantalum nitride film as barrier film by chemical vapor deposition | KABUSHIKIKAISHA KOJUNDOKAGAKU KENKYUSHO (JP) | 2003-07-15 | — | — | US | disclosed |
| US-20020115886-A1 | Tantalum tertiary amylimido tris (dimethylamide), a process for producing the same, a solution of starting material for MOCVD using the same, and a method of forming a tantalum nitride film using the same | KABUSHIKIKAISHA KOJUNDOKOKAGAKU KENKYUSHO (JP) | 2002-08-22 | — | — | US | disclosed |
| US-20020115886-A1 | Tantalum tertiary amylimido tris (dimethylamide), a process for producing the same, a solution of starting material for MOCVD using the same, and a method of forming a tantalum nitride film using the same | KABUSHIKIKAISHA KOJUNDOKOKAGAKU KENKYUSHO (JP) | 2002-08-22 | — | — | US | disclosed |
| EP-0966553-A1 | PROCESS FOR LOW TEMPERATURE CVD USING BI-AMIDES | SIEMENS AKTIENGESELLSCHAFT (DE) | 1999-12-29 | — | — | EP | disclosed |
| WO-1999029926-A1 | PROCESS FOR LOW TEMPERATURE CVD USING BI AMIDES | SIEMENS AKTIENGESELLSCHAFT (DE) | 1999-06-17 | — | — | WO | disclosed |
| CN-1205557-A | Process for producing thin films of oxide ceramic | SIEMENS AG (DE) | 1999-01-20 | — | — | CN | disclosed |