SCHEMBL7130501

SCHEMBL7130501

CC1(C)C(=O)c2cccc3cccc1c23

nearest known ligand 0.74

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TYMS P04818 7/20 0.74
CRHBP P24387 1/20 0.56
CRHR2 Q13324 1/20 0.56
PARP1 P09874 1/20 0.50
ALDH1A1 P00352 4/20 0.45
CES2 O00748 1/20 0.45
BCHE P06276 1/20 0.45
CES1 P23141 1/20 0.45
MCL1 Q07820 1/20 0.45
CYP3A4 P08684 1/20 0.39
PABPC1 P11940 1/20 0.39
DNMT1 P26358 1/20 0.39
CASP1 P29466 1/20 0.39
CASP7 P55210 1/20 0.39
HSD17B10 Q99714 2/20 0.39
KDM4E B2RXH2 2/20 0.39
HPGD P15428 2/20 0.39
MEN1 O00255 1/20 0.39
KMT2A Q03164 1/20 0.39
CYP1B1 Q16678 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17263918 0.78 ALDH1A1 (0.50) TYMSCRHBPCRHR2PARP1ALDH1A1
SCHEMBL29518254 0.78 ALDH1A1 (0.50) TYMSCRHBPCRHR2PARP1ALDH1A1
SCHEMBL19976612 0.77 TYMS (0.53) TYMSCRHBPCRHR2PARP1ALDH1A1
SCHEMBL15847664 0.76 TYMS (0.52) TYMSCRHBPCRHR2PARP1ALDH1A1
SCHEMBL7119781 0.76 TYMS (0.52) TYMSCRHBPCRHR2PARP1ALDH1A1
SCHEMBL10440496 0.76 TYMS (0.52) TYMSCRHBPCRHR2PARP1ALDH1A1
SCHEMBL22590221 0.75 TYMS (0.51) TYMSCRHBPCRHR2PARP1ALDH1A1
SCHEMBL15288764 0.74 TYMS (0.46) TYMSCRHBPCRHR2PARP1ALDH1A1
SCHEMBL31395712 0.73 ALDH1A1 (0.50) TYMSCRHBPCRHR2PARP1ALDH1A1
SCHEMBL25301053 0.73 TYMS (0.49) TYMSPARP1ALDH1A1CYP3A4PABPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 85 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240231231-A1 METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, AND RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2024-07-11 US disclosed
US-11747728-B2 Compound, resin, composition, resist pattern formation method, circuit pattern formation method and method for purifying resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-09-05 US disclosed
US-11747728-B2 Compound, resin, composition, resist pattern formation method, circuit pattern formation method and method for purifying resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-09-05 US disclosed
US-11709429-B2 Composition for forming organic film, patterning process, and polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-25 US disclosed
US-20230168585-A1 RESIST UNDERLAYER FILM MATERIAL, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-01 US disclosed
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-02-07 US disclosed
US-11256170-B2 Compound, resist composition, and method for forming resist pattern using it MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2022-02-22 US disclosed
US-11243467-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2022-02-08 US disclosed
US-11143962-B2 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-10-12 US disclosed
US-11137686-B2 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-10-05 US disclosed
US-20130143158-A1 Photosensitive Resin Composition for Color Filter and Color Filter Including the Same CHEIL INDUSTRIES INC. (KR) 2013-06-06 US disclosed
US-20130143158-A1 Photosensitive Resin Composition for Color Filter and Color Filter Including the Same CHEIL INDUSTRIES INC. (KR) 2013-06-06 US disclosed
US-20100104842-A1 ORGANIC-INORGANIC HYBRID COMPOSITION FUJIFILM CORPORATION (JP) 2010-04-29 US disclosed
US-20100104842-A1 ORGANIC-INORGANIC HYBRID COMPOSITION FUJIFILM CORPORATION (JP) 2010-04-29 US disclosed
WO-2008120811-A1 ORGANIC - INORGANIC HYBRID COMPOSITION FUJIFILM CORPORATION (JP) 2008-10-09 WO disclosed
WO-2008047992-A1 RESIN COMPOSITION COMPRISING CARDO RESIN, METHOD FOR FORMING PATTERN USING THE RESIN COMPOSITION AND COLOR FILTER USING PATTERN FORMED BY THE METHOD CHEIL INDUSTRIES INC. (KR) 2008-04-24 WO disclosed
US-6667303-B1 Agonists for serotonin 5-hydroxytryptamine 2C(5HT2C) receptor; 6-(1,4-diazepan-1-yl)benzo(cd)indol-2(1H)-ones, 6-(1,4-diazepan-1-yl)acenaphthylen-1(2H)-ones, and 5-(1,4-diazepan-1-yl)- 2H-naphtho(1,8-cd)isothiazole-1,1-dioxides WYETH 2003-12-23 US disclosed
US-5369084-A Isonicotinic acid derivatives and related spiro compounds with herbicidal action JANSSEN PHARMACEUTICAL N.V. (BE) 1994-11-29 US disclosed
EP-0558521-A1 ISONICOTINIC ACID DERIVATIVES AND RELATED SPIRO COMPOUNDS WITH HERBICIDAL ACTION JANSSEN PHARMACEUTICA N.V. (BE) 1993-09-08 EP disclosed
WO-1992009577-A1 ISONICOTINIC ACID DERIVATIVES AND RELATED SPIRO COMPOUNDS WITH HERBICIDAL ACTION JANSSEN PHARMACEUTICA N.V. (BE) 1992-06-11 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11256170-B2 Compound, resist composition, and method for forming resist pattern using it RDX, SLC11A2, FBL TYMS 3910/4885CRHBP 1336/4885CRHR2 1405/4885
US-11747728-B2 Compound, resin, composition, resist pattern formation method, circuit pattern formation method and method for purifying resin RER1, FEM1B, UNC119 TYMS 4402/4885CRHBP 2211/4885CRHR2 1525/4885
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method C9, C5, C1R TYMS 4084/4885CRHBP 4579/4885CRHR2 3221/4885
US-11137686-B2 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method MLLT1, PRDM9, NAP1L1 TYMS 4108/4885CRHBP 4769/4885CRHR2 4378/4885
US-11243467-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method C9, C5, C1R TYMS 4084/4885CRHBP 4579/4885CRHR2 3221/4885
US-11143962-B2 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method MLLT1, MLLT3, KDM2B TYMS 4258/4885CRHBP 4691/4885CRHR2 4555/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.