Naphthalene

Naphthalene

SCHEMBL7160995

O=S(=O)(O)C(F)(F)F.c1ccc2ccccc2c1

nearest known ligand 0.42

Full drug profile on Sugi Atlas →

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ALOX12 P18054 2/20 0.42
▸ CYP2A6 P11509 1/20 0.42
▸ PTPN1 P18031 5/20 0.41
▸ TSHR P16473 1/20 0.40
▸ SMN1; SMN2 Q16637 1/20 0.40
▸ CA2 P00918 3/20 0.38
▸ CA1 P00915 2/20 0.38
▸ CA9 Q16790 2/20 0.38
▸ CA5A P35218 1/20 0.38
▸ GPR3 P46089 1/20 0.38
▸ LMNA P02545 1/20 0.37
▸ KDM4E B2RXH2 1/20 0.36
▸ CES1 P23141 2/20 0.36
▸ PGK1 P00558 1/20 0.35
▸ PGK2 P07205 1/20 0.35
▸ HDAC3 O15379 1/20 0.35
▸ HDAC4 P56524 1/20 0.35
▸ HDAC1 Q13547 1/20 0.35
▸ HDAC7 Q8WUI4 1/20 0.35
▸ HDAC2 Q92769 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Naphthalene SCHEMBL29233861 1.00 ALOX12 (0.42) ALOX12CYP2A6PTPN1TSHRSMN1; SMN2
Anthracene SCHEMBL27569591 0.90 PTPN1 (0.43) CYP2A6PTPN1TSHRSMN1; SMN2CA2
Anthracene SCHEMBL21332717 0.90 PTPN1 (0.43) CYP2A6PTPN1TSHRSMN1; SMN2CA2
Naphthalene SCHEMBL28224059 0.87 PTPN1 (0.35) ALOX12CYP2A6PTPN1TSHRSMN1; SMN2
Phenanthrene SCHEMBL28237114 0.86 ALDH1A1 (0.52) CYP2A6TSHRCA2CA1CA9
Triphenylene SCHEMBL28448942 0.84 PTPN1 (0.41) PTPN1TSHRSMN1; SMN2CA2CA1
Triphenylene SCHEMBL1615352 0.84 PTPN1 (0.41) PTPN1TSHRSMN1; SMN2CA2CA1
Triphenylene SCHEMBL28454338 0.84 PTPN1 (0.41) PTPN1TSHRSMN1; SMN2CA2CA1
Trifluoromethanesulfonic Acid SCHEMBL1712877 0.84 CA2 (0.53) ALOX12PTPN1TSHRSMN1; SMN2CA2
Trifluoromethanesulfonic Acid SCHEMBL28212083 0.84 CYP1A2 (0.63) CYP2A6PTPN1CA2CA1CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116742135-A High-voltage electrolyte for lithium battery 浙江大学 2023-09-12 — — CN claimed
US-6380339-B1 REPEATING UNITS OF MALEIC ANHYDRIDE, NORBORNENE WITH AN ACID-LABILE GROUP, AND A VINYL WITH A SILICON CONTAINING GROUP INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) 2002-04-30 — — US claimed
US-20020042485-A1 SILICON-CONTAINING VINYL COPOLYMER AND RESIST COMPOSITION CONTAINING THE SAME INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 2002-04-11 — — US claimed
US-6114084-A COPOLYMERS AND TERPOLYMERS USED IN CHEMICALLY AMPLIFIED RESISTS SAMSUNG ELECTRONICS CO. LTD. (KR) 2000-09-05 — — US claimed
EP-0836119-A1 Chemically amplified resist composition Samsung Electronics Co., Ltd. (KR) 1998-04-15 — — EP claimed
CN-119101024-A Organic compound and light-emitting device 株式会社半导体能源研究所 2024-12-10 — — CN disclosed
CN-114621133-B Organic compound, organic electroluminescent material and light-emitting element 上海八亿时空先进材料有限公司 2024-04-02 — — CN disclosed
CN-116742135-A High-voltage electrolyte for lithium battery 浙江大学 2023-09-12 — — CN disclosed
CN-110832618-B Photoactive inorganic ligand-capped inorganic nanocrystals 芝加哥大学 2023-09-12 — — CN disclosed
CN-114651212-A Positive photosensitive material 默克专利股份有限公司 2022-06-21 — — CN disclosed
CN-114621133-A Organic compound, organic electroluminescent material and light-emitting element 上海八亿时空先进材料有限公司 2022-06-14 — — CN disclosed
CN-110627601-A Organic photoelectric semiconductor material and preparation method and application thereof 天津大学 2019-12-31 — — CN disclosed
CN-101808985-B Method for synthesizing organic sulfur compound using sulfide and organic sulfur indium complex KNU INDUSTRY COOPERATION FOUND 2013-07-31 — — CN disclosed
CN-101808985-A Method for synthesizing organic sulfur compound using sulfide and organic sulfur indium complex KNU INDUSTRY COOPERATION FOUND 2010-08-18 — — CN disclosed
US-6538086-B1 2-Methyl-2-(bicyclo(2.2.1)heptane) protective group; etch resistant amplified resists INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) 2003-03-25 — — US disclosed
US-6380339-B1 REPEATING UNITS OF MALEIC ANHYDRIDE, NORBORNENE WITH AN ACID-LABILE GROUP, AND A VINYL WITH A SILICON CONTAINING GROUP INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) 2002-04-30 — — US disclosed
US-20020042485-A1 SILICON-CONTAINING VINYL COPOLYMER AND RESIST COMPOSITION CONTAINING THE SAME INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 2002-04-11 — — US disclosed
US-6280903-B1 PHOTORESISTS OF NORBORNENE SUCCINIC ANHYDRIDE SAMSUNG ELECTRONICS CO., LTD. (KR) 2001-08-28 — — US disclosed
US-6114084-A COPOLYMERS AND TERPOLYMERS USED IN CHEMICALLY AMPLIFIED RESISTS SAMSUNG ELECTRONICS CO. LTD. (KR) 2000-09-05 — — US disclosed
EP-0836119-A1 Chemically amplified resist composition Samsung Electronics Co., Ltd. (KR) 1998-04-15 — — EP disclosed
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