SCHEMBL716141

SCHEMBL716141

CCCCOC(=O)c1cccc2[nH]nnc12

nearest known ligand 0.57

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 7/20 0.57
L3MBTL1 Q9Y468 3/20 0.57
TDP1 Q9NUW8 2/20 0.57
MAPK1 P28482 3/20 0.52
CYP3A4 P08684 3/20 0.52
TP53 P04637 1/20 0.52
ALDH1A1 P00352 9/20 0.51
LMNA P02545 2/20 0.51
HSD17B10 Q99714 2/20 0.51
KDM4E B2RXH2 4/20 0.49
POLB P06746 1/20 0.46
MMP1 P03956 1/20 0.45
MMP9 P14780 1/20 0.45
MMP12 P39900 1/20 0.45
RIPK1 Q13546 1/20 0.44
TRPA1 O75762 2/20 0.43
MMP2 P08253 1/20 0.43
CYP1A2 P05177 1/20 0.43
MAPT P10636 1/20 0.43
CYP2C9 P11712 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27972796 0.95 ALDH1A1 (0.59) TSHRL3MBTL1TDP1MAPK1CYP3A4
SCHEMBL9601334 0.95 ALDH1A1 (0.59) TSHRL3MBTL1TDP1MAPK1CYP3A4
SCHEMBL717427 0.95 ALDH1A1 (0.59) TSHRL3MBTL1TDP1MAPK1CYP3A4
SCHEMBL6395560 0.86 TSHR (0.53) TSHRCYP3A4ALDH1A1LMNAHSD17B10
SCHEMBL2369098 0.80 TSHR (0.50) TSHRL3MBTL1TDP1MAPK1CYP3A4
SCHEMBL11789726 0.79 TSHR (0.57) TSHRL3MBTL1TDP1MAPK1CYP3A4
SCHEMBL28891802 0.78 TSHR (0.46) TSHRL3MBTL1TDP1MAPK1CYP3A4
SCHEMBL8780374 0.77 PLA2G4B (0.46) TSHRTP53
SCHEMBL3310042 0.77 ALDH1A1 (0.54) TSHRL3MBTL1TDP1MAPK1CYP3A4
SCHEMBL28472895 0.77 HTT (0.46) ALDH1A1RIPK1MAPTMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 121 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109743878-B Suspension and grinding method 昭和电工材料株式会社 2021-07-06 CN claimed
US-8226849-B2 Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same HITACHI, LTD. (JP) 2012-07-24 US claimed
US-20090130849-A1 CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING COMPOSITION COMPRISING AMIDOXIME COMPOUNDS AND ASSOCIATED METHOD FOR USE EKC TECHNOLOGY, INC. 2009-05-21 US claimed
WO-2009058274-A1 CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING COMPOSITION COMPRISING AMIDOXIME COMPOUNDS AND ASSOCIATED METHOD FOR USE EKC TECHNOLOGY, INC. (US) 2009-05-07 WO claimed
EP-2046733-A1 PROCESS FOR THE PREPARATION OF EPSILON-ALKOXYCARBONYLLYSINES AND THEIR ANALOGUES F.I.S. FABBRICA ITALIANA SINTETICI S.P.A. (IT) 2009-04-15 EP claimed
WO-2008014811-A1 PROCESS FOR THE PREPARATION OF ε-ALKOXYCARBONYLLYSINES AND THEIR ANALOGUES F.I.S. FABBRICA ITALIANA SINTETICI S.P.A (IT) 2008-02-07 WO claimed
US-20070128872-A1 Polishing composition and polishing method SHOWA DENKO K.K. (JP) 2007-06-07 US claimed
CN-1902291-A Polishing composition and polishing method SHOWA DENKO KK (JP) 2007-01-24 CN claimed
EP-1687387-A1 POLISHING COMPOSITION COMPRISING PHOSPHATE ESTERS AND POLISHING METHOD Showa Denko K.K. (JP) 2006-08-09 EP claimed
WO-2005047409-A1 POLISHING COMPOSITION AND POLISHING METHOD SHOWA DENKO K.K. (JP) 2005-05-26 WO claimed
EP-4379780-A1 POLISHING LIQUID, POLISHING METHOD, COMPONENT MANUFACTURING METHOD, AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD Resonac Corporation (JP) 2024-06-05 EP disclosed
EP-4379779-A1 POLISHING SOLUTION, POLISHING METHOD, COMPONENT MANUFACTURING METHOD, AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD Resonac Corporation (JP) 2024-06-05 EP disclosed
CN-117795626-A Conductive particle, method for producing same, and conductive material 日本化学工业株式会社 2024-03-29 CN disclosed
EP-4339254-A1 POLISHING LIQUID, POLISHING METHOD, COMPONENT MANUFACTURING METHOD, AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD Resonac Corporation (JP) 2024-03-20 EP disclosed
CN-117693807-A Polishing liquid, polishing method, method for manufacturing component, and method for manufacturing semiconductor component 株式会社力森诺科 2024-03-12 CN disclosed
US-20030219982-A1 CMP (chemical mechanical polishing) polishing liquid for metal and polishing method HITACHI CHEMICAL CO., LTD (JP) 2003-11-27 US disclosed
CN-1392215-A Metal polishing liquid material, metal polishing liquid, method for producing same, and polishing method using same HITACHI CHEMICAL CO LTD (JP) 2003-01-22 CN disclosed
US-20020017630-A1 Abrasive liquid for metal and method for polishing RENESAS ELECTRONICS CORPORATION (JP) 2002-02-14 US disclosed
EP-1150341-A1 MATERIALS FOR POLISHING LIQUID FOR METAL, POLISHING LIQUID FOR METAL, METHOD FOR PREPARATION THEREOF AND POLISHING METHOD USING THE SAME HITACHI CHEMICAL COMPANY, LTD. (JP) 2001-10-31 EP disclosed
EP-1137056-A1 ABRASIVE LIQUID FOR METAL AND METHOD FOR POLISHING HITACHI CHEMICAL COMPANY, LTD. (JP) 2001-09-26 EP disclosed