SCHEMBL716320

SCHEMBL716320

C=C(C)C(=O)OC(C)c1ccccc1O

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 1/20 0.46
GABRB2 P47870 1/20 0.46
TSHR P16473 4/20 0.42
CA12 O43570 2/20 0.40
CA1 P00915 2/20 0.40
CA2 P00918 2/20 0.40
CA7 P43166 2/20 0.40
CA9 Q16790 2/20 0.40
CA14 Q9ULX7 2/20 0.40
ELANE P08246 1/20 0.37
POLB P06746 1/20 0.35
LMNA P02545 2/20 0.33
THRB P10828 1/20 0.33
CASP1 P29466 1/20 0.33
GAA P10253 1/20 0.33
CYP1A2 P05177 1/20 0.33
CYP2C19 P33261 1/20 0.33
PTGS1 P23219 1/20 0.33
PTGS2 P35354 1/20 0.33
MAPT P10636 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Phosphoric Acid SCHEMBL27613326 0.94 GABRA1 (0.41) GABRA1GABRB2TSHRCA12CA1
SCHEMBL27835359 0.87 CA1 (0.41) GABRA1GABRB2TSHRCA12CA1
SCHEMBL8988154 0.83 GABRA1 (0.41) GABRA1GABRB2TSHRCA12CA1
SCHEMBL3681971 0.83 ESR1 (0.40) TSHRELANEPOLBLMNACASP1
SCHEMBL27654695 0.82 HTT (0.41) TSHRELANELMNACASP1CYP1A2
SCHEMBL1130117 0.82 CASP1 (0.48) ELANELMNACASP1ALDH1A1
SCHEMBL7185345 0.82 POLB (0.45) TSHRCA12CA1CA2CA7
SCHEMBL26816137 0.82 ELANE (0.36) TSHRELANELMNACASP1GAA
Iodide SCHEMBL5873850 0.81 ELANE (0.36) TSHRELANELMNACASP1CYP1A2
SCHEMBL21112015 0.81 ALDH1A1 (0.41) TSHRCA12CA1CA2CA7

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-112346302-A Positive photosensitive resin composition, method for forming patterned resist film, and patterned resist film 东京应化工业株式会社 2021-02-09 CN disclosed
US-20210024674-A1 POLYMER COMPOUND, COMPOSITION, INSULATING LAYER, AND ORGANIC THIN FILM TRANSISTOR SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2021-01-28 US disclosed
US-10676554-B2 Polymer compound, film obtained by hardening this polymer compound and electronic device comprising this film SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-06-09 US disclosed
US-20190211123-A1 POLYMER COMPOUND, FILM OBTAINED BY HARDENING THIS POLYMER COMPOUND AND ELECTRONIC DEVICE COMPRISING THIS FILM SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2019-07-11 US disclosed
EP-2797110-B1 INSULATION-LAYER MATERIAL FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE SUMITOMO CHEMICAL CO (JP) 2018-02-28 EP disclosed
US-20170044287-A1 COMPOSITION AND ORGANIC FILM TRANSISTOR USING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-02-16 US disclosed
EP-3118891-A1 COMPOSITION AND ORGANIC THIN-FILM TRANSISTOR USING SAME Sumitomo Chemical Company Limited (JP) 2017-01-18 EP disclosed
US-9461257-B2 Electronic device insulating layer, and method for producing electronic device insulating layer SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-10-04 US disclosed
US-9362512-B2 Electronic device insulating layer material capable of forming an insulating layer at low temperature SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-06-07 US disclosed
US-20150236281-A1 INSULATION-LAYER MATERIAL FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-08-20 US disclosed
EP-2320467-B1 RESIN COMPOSITION, GATE INSULATING LAYER AND ORGANIC THIN FILM TRANSISTOR SUMITOMO CHEMICAL CO (JP) 2014-08-13 EP disclosed
US-20140070205-A1 ORGANIC THIN-FILM TRANSISTOR INSULATING LAYER MATERIAL SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-03-13 US disclosed
US-8476621-B2 Resin composition, gate insulating layer, and organic thin film transistor SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-07-02 US disclosed
US-20120292626-A1 OPTICAL AND THERMAL ENERGY CROSS-LINKABLE INSULATING LAYER MATERIAL FOR ORGANIC THIN FILM TRANSISTOR SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-11-22 US disclosed
CN-102612752-A Optical and thermal energy crosslinkable insulating layer material for organic thin film transistor SUMITOMO CHEMICAL CO 2012-07-25 CN disclosed
US-20120053287-A1 RESIN COMPOSITION FOR INSULATING LAYER SUMITOMO CHEMICAL COMPANY, LTD (JP) 2012-03-01 US disclosed
US-20110193071-A1 RESIN COMPOSITION, GATE INSULATING LAYER, AND ORGANIC THIN FILM TRANSISTOR SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-08-11 US disclosed
EP-2320467-A1 RESIN COMPOSITION, GATE INSULATING LAYER AND ORGANIC THIN FILM TRANSISTOR Sumitomo Chemical Company, Limited (JP) 2011-05-11 EP disclosed
CN-101523305-A Volume hologram optical recording medium, composition for forming volume hologram recording layer, and volume hologram recording material MITSUBISHI CHEM CORP (JP) 2009-09-02 CN disclosed
CN-101501579-A Volume hologram optical recording medium, composition for forming volume hologram recording layer, volume hologram recording material, and volume hologram optical recording method MITSUBISHI CHEM CORP (JP) 2009-08-05 CN disclosed