SCHEMBL718000

SCHEMBL718000

C=Cc1ccc(C(=C)OC(C)=O)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.41
TAS1R3 Q7RTX0 3/20 0.41
TAS1R1 Q7RTX1 3/20 0.41
TDP1 Q9NUW8 3/20 0.37
HSD17B10 Q99714 1/20 0.37
MAPT P10636 3/20 0.34
GLA P06280 1/20 0.34
POLB P06746 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
TRPA1 O75762 1/20 0.33
HDAC8 Q9BY41 1/20 0.32
TSHR P16473 2/20 0.32
F3 P13726 1/20 0.32
KDM4E B2RXH2 1/20 0.32
MEN1 O00255 1/20 0.32
LMNA P02545 1/20 0.32
TTR P02766 1/20 0.32
TP53 P04637 1/20 0.32
CYP3A4 P08684 1/20 0.32
KMT2A Q03164 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8767173 0.81 ALDH1A1 (0.41) ALDH1A1TAS1R3TAS1R1TDP1HSD17B10
SCHEMBL8726140 0.80 TAS1R3 (0.40) ALDH1A1TAS1R3TAS1R1TDP1HSD17B10
SCHEMBL3382989 0.79 ALDH1A1 (0.48) ALDH1A1TDP1HSD17B10MAPTMEN1
SCHEMBL13777826 0.77 ALDH1A1 (0.44) ALDH1A1TDP1HSD17B10MAPTPOLB
SCHEMBL8760128 0.77 CES2 (0.46) ALDH1A1MAPTL3MBTL1TSHRKDM4E
SCHEMBL17677417 0.76 ALDH1A1 (0.48) ALDH1A1TAS1R3TAS1R1TDP1MAPT
SCHEMBL280538 0.76 ELANE (0.47) ALDH1A1TDP1HSD17B10MAPTTSHR
SCHEMBL273504 0.76 ALDH1A1 (0.52) ALDH1A1TAS1R3TAS1R1TDP1MAPT
SCHEMBL14551186 0.76 ALDH1A1 (0.42) ALDH1A1TAS1R3TAS1R1TDP1TRPA1
SCHEMBL3385266 0.76 MAPT (0.61) MAPTHDAC8MEN1LMNAKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 96 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-121586750-A Composition for forming silicon-containing underlayer film for directional self-assembly 日产化学株式会社 2026-02-27 CN disclosed
US-20250206901-A1 BRUSH MATERIAL FOR SELF-ASSEMBLED FILM NISSAN CHEMICAL CORPORATION (JP) 2025-06-26 US disclosed
CN-120019330-A Underlying film material for self-assembled materials 日产化学株式会社 2025-05-16 CN disclosed
US-20250147413-A1 METHOD FOR PRODUCING STRUCTURE HAVING PHASE-SEPARATED STRUCTURE TOKYO OHKA KOGYO CO., LTD. (JP) 2025-05-08 US disclosed
US-20250101145-A1 BLOCK COPOLYMERS AND METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES USING THE SAME KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 2025-03-27 US disclosed
WO-2025047871-A1 UNDERLAYER FILM MATERIAL FOR SELF-ASSEMBLED MATERIALS 日産化学株式会社 2025-03-06 WO disclosed
WO-2025041813-A1 COMPOSITION FOR FORMING SILICON-CONTAINING UNDERLAYER FILM FOR INDUCED SELF-ASSEMBLY 日産化学株式会社 2025-02-27 WO disclosed
US-20250011622-A1 BLOCK COPOLYMER, UNDERCOAT AGENT, RESIN COMPOSITION FOR FORMING PHASE-SEPARATED STRUCTURE, AND METHOD FOR PRODUCING STRUCTURE BODY INCLUDING PHASE-SEPARATED STRUCTURE TOKYO OHKA KOGYO CO LTD (JP) 2025-01-09 US disclosed
US-20250011616-A1 METHOD FOR PRODUCING STRUCTURE BODY INCLUDING PHASE-SEPARATED STRUCTURE, AND COMPOSITION TOKYO OHKA KOGYO CO LTD (JP) 2025-01-09 US disclosed
US-20240425694-A1 RESIN COMPOSITION FOR FORMING PHASE-SEPARATED STRUCTURE, AND METHOD FOR PRODUCING STRUCTURE BODY INCLUDING PHASE-SEPARATED STRUCTURE TOKYO OHKA KOGYO CO., LTD. (JP) 2024-12-26 US disclosed
US-20150030773-A1 UNDERCOAT AGENT AND METHOD OF PRODUCING STRUCTURE CONTAINING PHASE-SEPARATED STRUCTURE TOKYO OHKA KOGYO CO., LTD. (JP) 2015-01-29 US disclosed
US-20140238954-A1 METHOD OF PRODUCING STRUCTURE CONTAINING PHASE-SEPARATED STRUCTURE, METHOD OF FORMING PATTERN, AND TOP COAT MATERIAL TOKYO INSTITUTE OF TECHNOLOGY (JP) 2014-08-28 US disclosed
US-20140234589-A1 METHODS OF PATTERNING BLOCK COPOLYMER LAYERS AND PATTERNED STRUCTURES SAMSUNG ELECTRONICS CO., LTD. (KR) 2014-08-21 US disclosed
US-20140127626-A1 RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT WHICH IS USED FOR FORMATION OF GUIDE PATTERN, GUIDE PATTERN FORMATION METHOD, AND METHOD FOR FORMING PATTERN ON LAYER CONTAINING BLOCK COPOLYMER RIKEN (JP) 2014-05-08 US disclosed
US-20140113236-A1 SOLVENT DEVELOPABLE NEGATIVE RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND METHOD FOR FORMING PATTERN OF LAYER INCLUDING BLOCK COPOLYMER RIKEN (JP) 2014-04-24 US disclosed
US-20140030652-A1 PRIMER AND PATTERN FORMING METHOD FOR LAYER INCLUDING BLOCK COPOLYMER RIKEN (JP) 2014-01-30 US disclosed
US-20130313223-A1 METHOD FOR PRODUCING SUBSTRATE HAVING SURFACE NANOSTRUCTURE TOKYO OHKA KOGYO CO., LTD. (JP) 2013-11-28 US disclosed
US-20130240481-A1 BLOCK COPOLYMER-CONTAINING COMPOSITION AND METHOD OF REDUCING PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-09-19 US disclosed
US-20130210231-A1 METHOD OF FORMING CONTACT HOLE PATTERN RIKEN (JP) 2013-08-15 US disclosed
US-20120048738-A1 SUBSTRATE PROVIDED WITH METAL NANOSTRUCTURE ON SURFACE THEREOF AND METHOD OF PRODUCING THE SAME TOKYO OHKA KOGYO CO., LTD. (JP) 2012-03-01 US disclosed