SCHEMBL7202624

SCHEMBL7202624

C=C(C)C(=O)Oc1ccc(S(=O)(=O)c2ccc(O)cc2)cc1

nearest known ligand 0.62

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ELANE P08246 4/20 0.62
PKM P14618 3/20 0.59
POLB P06746 1/20 0.59
MAPT P10636 1/20 0.59
GAA P10253 2/20 0.57
KMT2A Q03164 3/20 0.47
ATM Q13315 1/20 0.47
ALDH1A1 P00352 1/20 0.40
ENPP2 Q13822 1/20 0.40
RAPGEF4 Q8WZA2 1/20 0.39
CA2 P00918 2/20 0.39
NPSR1 Q6W5P4 1/20 0.39
LMNA P02545 1/20 0.37
CA12 O43570 1/20 0.36
CA1 P00915 1/20 0.36
CA9 Q16790 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1232411 0.93 PKM (0.67) ELANEPKMPOLBMAPTGAA
SCHEMBL72362 0.88 ELANE (0.61) ELANEMAPTGAAKMT2AATM
SCHEMBL9703386 0.87 PKM (0.59) ELANEPKMPOLBMAPTGAA
SCHEMBL3118881 0.85 ELANE (0.63) ELANEPKMPOLBMAPTGAA
SCHEMBL3402161 0.84 ELANE (0.50) ELANEPKMPOLBMAPTGAA
SCHEMBL217004 0.83 ELANE (0.56) ELANEMAPTGAAKMT2AATM
Methacrylic Acid SCHEMBL8512987 0.83 ELANE (0.60) ELANEPOLBMAPTGAAKMT2A
SCHEMBL14227007 0.83 PKM (0.85) ELANEPKMPOLBMAPTGAA
SCHEMBL9222127 0.82 PKM (0.53) ELANEPKMPOLBMAPTKMT2A
SCHEMBL1436154 0.81 ELANE (0.54) ELANEPKMPOLBMAPTGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20220169060-A1 THERMOSENSITIVE RECORDING MEDIUM AND IMAGE-FORMING METHOD CANON KABUSHIKI KAISHA (JP) 2022-06-02 US disclosed
CN-100346230-C Material for preservative formation TOKYO O KAGAKU KOGYO CO LTD (JP) 2007-10-31 CN disclosed
US-6599682-B2 Controlling refractive index and light absorption coefficient of the antireflection coating film by appropriately selecting the types of compositions; films thickness very small TOKYO OHKA KOGYO CO., LTD. (JP) 2003-07-29 US disclosed
CN-1388414-A Material for preservative formation TOKYO O KAGAKU KOGYO CO LTD (JP) 2003-01-01 CN disclosed
US-20010044080-A1 Method for forming a finely patterned photoresist layer TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-22 US disclosed
US-6083665-A Photoresist laminate and method for patterning using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2000-07-04 US disclosed
US-5925495-A Photoresist laminate and method for patterning using the same TOKYO OHKA KOGYO CO., LTD. (JP) 1999-07-20 US disclosed