Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ERN1 | O75460 | 3/20 | 0.60 |
| ▸ | MAPT | P10636 | 3/20 | 0.50 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.50 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.50 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.50 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.47 |
| ▸ | NPC1 | O15118 | 2/20 | 0.47 |
| ▸ | RAB9A | P51151 | 1/20 | 0.47 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.47 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.46 |
| ▸ | GAA | P10253 | 1/20 | 0.46 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.44 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.44 |
| ▸ | CYP2A6 | P11509 | 1/20 | 0.44 |
| ▸ | TSHR | P16473 | 1/20 | 0.44 |
| ▸ | ADRB2 | P07550 | 1/20 | 0.44 |
| ▸ | ADRB1 | P08588 | 1/20 | 0.44 |
| ▸ | HPRT1 | P00492 | 1/20 | 0.41 |
| ▸ | PADI4 | Q9UM07 | 1/20 | 0.41 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15789398 | 0.82 | ERN1 (0.42) | ERN1MAPTCYP1A2CYP2C9CYP2C19 | |
| SCHEMBL18242152 | 0.79 | CYP2A6 (0.44) | ERN1MAPTCYP1A2CYP2C9CYP2C19 | |
| SCHEMBL9466601 | 0.79 | ALDH1A1 (0.44) | ERN1MAPTCYP1A2CYP2C9CYP2C19 | |
| SCHEMBL808500 | 0.78 | ERN1 (0.64) | ERN1MAPTCYP1A2CYP2C9CYP2C19 | |
| SCHEMBL29391032 | 0.78 | ERN1 (0.64) | ERN1MAPTCYP1A2CYP2C9CYP2C19 | |
| SCHEMBL8375774 | 0.78 | TSHR (0.42) | ERN1MAPTCYP1A2CYP2C9CYP2C19 | |
| SCHEMBL321407 | 0.77 | ERN1 (0.62) | ERN1MAPTCYP1A2CYP2C9CYP2C19 | |
| SCHEMBL9148679 | 0.77 | ERN1 (0.62) | ERN1MAPTCYP1A2CYP2C9CYP2C19 | |
| SCHEMBL31663413 | 0.77 | ERN1 (0.62) | ERN1MAPTCYP1A2CYP2C9CYP2C19 | |
| SCHEMBL197337 | 0.77 | ERN1 (0.62) | ERN1MAPTCYP1A2CYP2C9CYP2C19 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11480877-B2 | Resist composition, method for forming resist pattern, and polyphenol compound used therein | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-10-25 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| CN-107533290-B | Resist base material, resist composition, and method for forming resist pattern | 三菱瓦斯化学株式会社 | 2021-04-09 | — | — | CN | disclosed |
| EP-3279728-B1 | RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-17 | — | — | EP | disclosed |
| CN-107428646-B | Compounds, resins, and methods for their purification, and uses thereof | 三菱瓦斯化学株式会社 | 2021-03-02 | — | — | CN | disclosed |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-31 | — | — | US | disclosed |
| US-10816898-B2 | — | — | 2020-10-27 | — | — | US | disclosed |
| US-10747112-B2 | Compound, resin, and purification method thereof, material for forming underlayer film for lithography, composition for forming underlayer film, and underlayer film, as well as resist pattern forming method and circuit pattern forming method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-08-18 | — | — | US | disclosed |
| EP-3279190-B1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN | MITSUBISHI GAS CHEMICAL CO (JP) | 2020-08-12 | — | — | EP | disclosed |
| US-20180074402-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-03-15 | — | — | US | disclosed |
| EP-3279731-A1 | RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD | Mitsubishi Gas Chemical Company, Inc. (JP) | 2018-02-07 | — | — | EP | disclosed |
| EP-3279190-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2018-02-07 | — | — | EP | disclosed |
| EP-3279728-A1 | RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2018-02-07 | — | — | EP | disclosed |
| EP-3279730-A1 | RADIATION-SENSITIVE COMPOSITION, AMORPHOUS FILM, AND RESIST PATTERN-FORMATION METHOD | Mitsubishi Gas Chemical Company, Inc. (JP) | 2018-02-07 | — | — | EP | disclosed |
| EP-3279179-A1 | COMPOUND, RESIN, AND METHOD FOR PURIFYING SAME, UNDERLAYER FILM FORMATION MATERIAL FOR LITHOGRAPHY, UNDERLAYER FILM FORMING COMPOSITION, AND UNDERLAYER FILM, AND METHOD FOR FORMING RESIST PATTERN AND METHOD FOR FORMING CIRCUIT PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2018-02-07 | — | — | EP | disclosed |
| US-9122153-B2 | Cyclic compound, method for producing same, composition, and method for forming resist pattern | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2015-09-01 | — | — | US | disclosed |
| US-20140308615-A1 | CYCLIC COMPOUND, METHOD FOR PRODUCING SAME, COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2014-10-16 | — | — | US | disclosed |
| EP-2743249-A1 | CYCLIC COMPOUND, METHOD FOR PRODUCING SAME, COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2014-06-18 | — | — | EP | disclosed |
| US-20030199561-A1 | Boronic ester and acid compounds, synthesis and uses | MILLENNIUM PHARMACEUTICALS, INC. | 2003-10-23 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11480877-B2 | Resist composition, method for forming resist pattern, and polyphenol compound used therein | SLC11A2, ABCC1, FBL | ERN1 2740/4885MAPT 3209/4885CYP1A2 955/4885 |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C1R, RAD51 | ERN1 1519/4885MAPT 4014/4885CYP1A2 1796/4885 |
| US-20030199561-A1 | Boronic ester and acid compounds, synthesis and uses | BCL6, BCAP31, CD79B | ERN1 1136/4885MAPT 4355/4885CYP1A2 4663/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | ERN1 1632/4885MAPT 3986/4885CYP1A2 1713/4885 |
| US-20180074402-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN | SLC11A2, ABCC1, FBL | ERN1 2740/4885MAPT 3209/4885CYP1A2 955/4885 |
| US-10747112-B2 | Compound, resin, and purification method thereof, material for forming underlayer film for lithography, composition for forming underlayer film, and underlayer film, as well as resist pattern forming method and circuit pattern forming method | C5, PRMT9, C9 | ERN1 1234/4885MAPT 4482/4885CYP1A2 2571/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | ERN1 1632/4885MAPT 3986/4885CYP1A2 1713/4885 |
| US-10816898-B2 | — | C5, C9, H1-0 | ERN1 1627/4885MAPT 4171/4885CYP1A2 344/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.